Výsledky vyhledávání - "Özcan Öktü"

Observation and enhancement of visible photoluminescence of PECVD a‐SiO x :H (x < 2) thin films by microcavity effect

Autor: Alp Osman Kodolbaş, Özcan Öktü, Akın Bacıoğlu

Publikováno v: physica status solidi c. 7:1405-1408

a-SiOx:H (x < 2) thin film samples prepared in a PECVD system by using SiH4+CO2 gas mixture show strong room temperature visible photoluminescence (PL) at a photon energy of 2.1 eV. The PL spectrum of a single layer sample was observed to reshape due

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f202ec4a5522e974d92a96a1f1e4ee7
https://doi.org/10.1002/pssc.200983355

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Excitation power dependent photolu‐ minescence of PECVD a‐SiO x :H (x<2) thin films

Autor: Özcan Öktü, Akın Bacıoğlu, Alp Osman Kodolbaş

Publikováno v: physica status solidi c. 7:688-691

The excitation power dependent visible photoluminescence (PL) property of an a-SiOx:H (x < 2) sample prepared in a PECVD system is studied within a temperature range of 12 K and 400 K. An explicit PL band was observed at the photon energy of 2.1 eV.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8d02f08a7b7b8998ab96f86e59460e44
https://doi.org/10.1002/pssc.200982731

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Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals

Autor: Mevlüt Karabulut, Özcan Öktü, O. Kodolbaş, Hüseyin Ertap, Akın Bacıoğlu, G. M. Mamedov

Publikováno v: Journal of Luminescence. 129:226-230

The photoluminescence, photoconductivity and absorption in GaSe 0.9 Te 0.1 alloy crystals have been investigated as a function of temperature and external electric field. It has been observed that the exciton peaks shift to lower energy in GaSe 0.9 T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc194a6ed9466e8b76072bc107146548
https://doi.org/10.1016/j.jlumin.2008.09.015

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The electric-field effect on the exciton photoconductivity and Urbach tail in GaSe crystals

Autor: Mevlüt Karabulut, Özcan Öktü, G. M. Mamedov, A. O. Kodolbaş

Publikováno v: physica status solidi (b). 245:2794-2799

The direct free exciton (n = 1) photoconductivity in GaSe crystals has been investigated as a function of applied electric field. The changes observed in the exciton photoconductivity have been analyzed using the Franz–Keldysh, exciton electroabsor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::840b1603c2c5bd5e923b5058b3d96401
https://doi.org/10.1002/pssb.200844203

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Exciton photoconductivity in Ge-doped GaSe crystals

Autor: G. M. Mamedov, A. O. Kodolbaş, Mevlüt Karabulut, Özcan Öktü

Publikováno v: physica status solidi (b). 242:2885-2891

Spectral photoconductivity in Ge-doped GaSe crystals was investigated as a function of temperature. It is found that when the crystal is doped with small concentrations of Ge atoms (0.01 at%), the photoconductivity is carried out by the ionization of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f0f063a6fdf17fd2220d15d8bb4163c4
https://doi.org/10.1002/pssb.200540097

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Deposition of highly photoconductive wide band gap a-SiO:H thin films at a high temperature without H-dilution

Autor: Özcan Öktü, Alp Osman Kodolbaş, Akın Bacıoğlu

Publikováno v: Solar Energy Materials and Solar Cells. 89:49-59

Electrical and optical characterisation of hydrogenated amorphous silicon–oxygen alloy thin films (a-SiO x :H, x 2 ) grown in a single chamber radio frequency plasma enhanced chemical vapour deposition (PECVD) system at a high substrate temperature

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ea5991ce569288a055a1a6c420b56d9c
https://doi.org/10.1016/j.solmat.2005.01.001

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Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films

Autor: A. Bacıogˇlu, Özcan Öktü, Alp Osman Kodolbaş, B. Çomak

Publikováno v: Journal of Non-Crystalline Solids. 351:426-431

Hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon-oxide alloy films (a-SiO x :H) were investigated by temperature dependence of lateral photovoltage (LPV) measurements. The suboxide sample with [O] = 27 at.%, was found to exh

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e444281fc3fcb4fb7ba30de0bd5ba9ec
https://doi.org/10.1016/j.jnoncrysol.2005.01.005

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Optimisation of the RF power density to obtain good quality hydrogenated amorphous silicon films in a home-made glow discharge system

Autor: Akın Bacıoğlu, Özcan Öktü, Alp Osman Kodolbaş

Publikováno v: Optical Materials. 25:335-339

A set of hydrogenated amorphous silicon (a-Si:H) films were prepared in a home-made chemical vapour deposition (CVD) system by varying, 20 MHz RF power density from 20 to 130 mW/cm2 to find the optimised value of the RF power density. The other depos

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e29d3131cbed108cd579a43c05706b13
https://doi.org/10.1016/j.optmat.2003.08.004

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A comparative study for metastable defect creation and annealing kinetics and their relation to photoconductivity in a-Si1−xCx:H

Autor: Alp Osman Kodolbaş, Özcan Öktü

Publikováno v: Journal of Non-Crystalline Solids. 321:103-109

We have utilised the constant photocurrent method (CPM) and steady state photoconductivity measurements to investigate the creation and annealing kinetics of light induced metastable defects, and their effect on photoconductivity, in a set of good qu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce68781297511cdda140d5f861cf9529
https://doi.org/10.1016/s0022-3093(03)00106-6

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