Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Örjan Danielsson"'
A comprehensive systematic method for chemical vapour deposition modelling consisting of seven well defined steps is presented. The method is general in the sense that it is not adapted to a certain type of chemistry or reactor configuration. The met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a2e2860b74b69494d71fd1873566a8d
https://doi.org/10.26434/chemrxiv.9943964.v2
https://doi.org/10.26434/chemrxiv.9943964.v2
The deposition rate of silicon carbide (SiC) in chemical vapor deposition (CVD) can be boosted by addition of chlorine. This has been explored and applied for hard coatings and electronic grade SiC. We briefly summarize the recent research done in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::319340563a038ecb79f798c49ccc0da0
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-171381
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-171381
Autor:
Örjan Danielsson
Publikováno v:
Materials Science Forum. 924:100-103
Understanding the chemistry in CVD of SiC is important to be able to control, improve and scale up the process to become industrially competitive. A thorough understanding have so far been difficult to achieve due to the complex nature of the process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7190e80ceb1cd820c4689fb2545503e
https://doi.org/10.4028/www.scientific.net/msf.924.100
https://doi.org/10.4028/www.scientific.net/msf.924.100
Publikováno v:
The Journal of Physical Chemistry A. 122:2503-2512
Silicon carbide is a wide bandgap semiconductor with unique characteristics suitable for high temperature and high power applications. Fabrication of SiC epitaxial layers is usually performed using chemical vapor deposition (CVD). In this work, we us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b55362bdf4b2ed5496d467609a2597b0
https://doi.org/10.1021/acs.jpca.7b10800
https://doi.org/10.1021/acs.jpca.7b10800
Autor:
Pitsiri Sukkaew, Ildikó Farkas, Lars Ojamäe, Henrik Pedersen, Pontus Stenberg, Olof Kordina, Erik Janzén, Örjan Danielsson
Publikováno v:
The Journal of Physical Chemistry C. 121:2711-2720
The use of chlorinated chemical vapor deposition (CVD) chemistry for growth of homoepitaxial layers of silicon carbide (SiC) has diminished the problem of homogenous gas phase nucleation, mainly the formation of Si droplets, in CVD of SiC by replacin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc88d9b300a3a9b6aef040887126cd0b
https://doi.org/10.1021/acs.jpcc.6b10849
https://doi.org/10.1021/acs.jpcc.6b10849
Autor:
Pontus Stenberg, Pitsiri Sukkaew, Lars Ojamäe, Erik Janzén, Örjan Danielsson, Edvin Erdtman, Henrik Pedersen
Publikováno v:
Journal of Materials Chemistry C. 5:5818-5823
Chemical Vapor Deposition (CVD) is one of the technology platforms forming the backbone of the semiconductor industry and is vital in the production of electronic devices. To upscale a CVD process from the lab to the fab, large area uniformity and hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23908cd963b1eda79d66999ef56be80a
https://doi.org/10.1039/c7tc00138j
https://doi.org/10.1039/c7tc00138j
The chemical vapour deposition (CVD) process, used to produce high quality, large area thin film coatings, is in many aspects a black box, where input parameters are adjusted to control the final deposition output, but where the underlying mechanisms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7bd41a19ec08914b26c1d2b635c028a
https://doi.org/10.26434/chemrxiv.9943964.v1
https://doi.org/10.26434/chemrxiv.9943964.v1
Publikováno v:
Journal of Materials Chemistry C. 4:863-871
Semi-insulating buffer layers are utilized to prevent leakage currents in Gallium Nitride (GaN) high power semiconductor devices. To make the GaN material semi-insulating, it can be doped with carbon. Carbon is inherently present in the process for p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38f96a420f644a812200d9eaf84e05c2
https://doi.org/10.1039/c5tc03989d
https://doi.org/10.1039/c5tc03989d
Silicon carbide is a wide bandgap semiconductor ideally suitable for high temperature and high power applications. An active SiC layer is usually fabricated using halide-assisted chemical vapor deposition (CVD). In this work, we use quantum chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e082567cc19ffd87db6a48183049b524
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-144885
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-144885
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P27-P35
Atomization energies, enthalpies of formation, entropies as well as heat capacities of the SiHnXm and CHnXm systems, with X being F, Cl and Br, have been studied using quantum chemical calculations. The Gaussian-4 theory (G4) and Weizman-1 theory as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41d4bd089e85f46b84fea7e49fc3000c
https://doi.org/10.1149/2.0081602jss
https://doi.org/10.1149/2.0081602jss