Výsledky vyhledávání - "Ömer Sevgili"

Akademický článek

The photodiode performances of NDI-appended ruthenium complexes

Autor: Sibel Seven, Evin Yigit, Sinan Bayindir, Feride Akman, Ömer Sevgili, Osman Dayan, İkram Orak

Publikováno v: Nano Express, Vol 5, Iss 2, p 025002 (2024)

The synthesis and investigation of photoelectric studies of simple organic compounds as organic interlayers are of significant importance and widely studied. As such, we synthesized naphthalene diimide (NDI)-appended ruthenium complexes (Ru-NDIs) to

Externí odkaz: https://doaj.org/article/8983cd2fad224a248530c580febf2520

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Investigation of dielectric relaxation and ac conductivity in Au/(carbon nanosheet-PVP composite)/n-Si capacitors using impedance measurements

Autor: Yasemin Şafak Asar, Ömer Sevgili, Şemsettin Altındal

Publikováno v: Journal of Materials Science: Materials in Electronics. 34

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d4bf8a9d6dae08f61f4bccf5bc21744c
https://doi.org/10.1007/s10854-023-10320-1

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Electrical properties of Al/p-Si diode with AlN interface layer under temperature and illumination stimuli for sensing applications

Autor: Evin Yiğit, Ömer Sevgili, İkram Orak

Publikováno v: Applied Physics A. 129

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b876bb1e433830244911c9e6ac65b669
https://doi.org/10.1007/s00339-023-06432-4

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The examination of the electrical properties of Al/Mg2Si/p-Si Schottky diodes with an ecofriendly interfacial layer depending on temperature and frequency

Autor: Ömer Sevgili, İkram Orak, Kevser Sahin Tiras

The electrical properties of Al/Mg2Si/p-SiSchottky diodesfabricated were examined at various frequencies and temperatures. The structural and surface morphological features of the interface layer (Mg2Si) were analyzed byXRD,SEM, and EDX. For the fabr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89fdccc0b9aa8d3d6e1672b5d3c070fc
https://avesis.erciyes.edu.tr/publication/details/ec579fd3-d1d6-4cbe-afd4-f9907673fd8e/oai

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The electrical and photophysical performances of axially-substituted naphthalene diimide-based small molecules as interface layer

Autor: Sinan Bayindir, Evin Yigit, Feride Akman, Ömer Sevgili, İkram Orak, Osman Dayan

Publikováno v: Materials Science and Engineering: B. 294:116510

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::42075bad9546ec3ff7569b695fa3daf1
https://doi.org/10.1016/j.mseb.2023.116510

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Optical and Electrical Properties of Pyrene–Imine Organic Interface Layer Based on p-Si

Autor: İkram Orak, Zakir Çaldıran, Musa Erdoğan, Ali Yeşildağ, Ömer Sevgili

Publikováno v: Journal of Electronic Materials. 50:6448-6458

In the present study, 1,4-phenylenebis-1-(pyren-1-yl)methanimine derivative 3 (C40H24N2) was synthesized in high yield by condensation reaction of pyrene-1-carbaldehyde (1) with benzene-1,4-diamine (2). The structures of the obtained organic compound

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24cb8362d45f820e6310568aed008abc
https://doi.org/10.1007/s11664-021-09178-y

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The Effect of Terbium (Tb) Doped İnterface on The Electrical Characteristics of Al /P-Si Schotkky Diodes

Autor: Ömer Sevgili

Publikováno v: International Journal of Pure and Applied Sciences. 7:219-228

Bu çalışmada Terbiyum katkılı Seryum Magnezyum Alüminat, metal ve yarıiletken kristal arasına bir tabaka olarak döner-kaplama yöntemi kullanılarak oluşturuldu. Arayüzeye sahip Schottky Diyotun ve arayüzeysiz Schottky Diyotun elektiksel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2945439e4bbf79ec477a9a479549df68
https://doi.org/10.29132/ijpas.854046

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Termal Buharlaştırma Yöntemiyle Hazırlanan Al/TiO2/p-Si Schottky Diyotun Elektriksel Özelliklerinin Sıcaklık ve Aydınlanma Şiddetine Bağlı İncelenmesi

Autor: Ömer Sevgili

Publikováno v: Türk Doğa ve Fen Dergisi. 10:275-283

Bu çalışmada kullanılan Al/TiO2/p-Si Schottky Diyotu (SD) termal buharlaştırma yöntemi kullanılarak oluşturuldu. Aygıtın elektriksel özellikleri geniş sıcaklık ve aydınlanma şiddeti aralığında gerçekleştirildi. Sıcaklığa bağ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e126c6ddf927241803b0c7872021abe5
https://doi.org/10.46810/tdfd.934492

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The electrical, and photosensitive behavior of diodes with rare earth elements (Yb and Er) doped sodium yttrium fluoride interfacial layer

Autor: Evin Yiğit, Ömer Sevgili, İkram Orak

Publikováno v: Physica Scripta. 98:055939

This study presents the morphological, electrical, and photosensitive behavior properties of the Al/(NaYF 4 :Yb,Er)/p-Si structure. The (NaYF 4 :Yb,Er) used as an interfacial layer was deposited on a p-Si semiconductor using the thermal evaporation m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3a769ff27a1d21ca4b4bb972b844eb80
https://doi.org/10.1088/1402-4896/accd28

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On the examination of temperature-dependent possible current-conduction mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky barrier diodes in wide range of voltage

Autor: Ömer Sevgili

Publikováno v: Journal of Materials Science: Materials in Electronics. 32:10112-10122

Au/(nanocarbon-PVP)/n-Si SDs were fabricated and their current-conduction mechanisms (CCMs) have been examined in elaborative by utilizing current-voltage (I-V) characteristics in temperature range of 60-340K at (± 3V) ranges. The values of ideality

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60b2963e21898f2d6254ebe723d87fd9
https://doi.org/10.1007/s10854-021-05669-0

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