Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ömer Ahmet Kayal"'
Autor:
Sertaç Ural, Ömer Ahmet Kayal, Berkay Bozok, Bayram Butun, Mustafa Kemal Öztürk, Gokhan Kurt, Melisa Ekin Gulseren, Ekmel Ozbay
Publikováno v:
Proceedings Gallium Nitride Materials and Devices XIV
Date of Conference: 2-7 February 2019 Conference name: SPIE OPTO, 2019 A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9739f10407175a6399ba5cba2e143832
https://hdl.handle.net/11693/52938
https://hdl.handle.net/11693/52938
Autor:
Şemsettin Altındal, Sertaç Ural, Ömer Ahmet Kayal, Mustafa Kemal Öztürk, Ekmel Ozbay, Engin Arslan
Publikováno v:
Journal of Electronic Materials
Pt/Au, Ni/Au, Ni/Pt/Au Schottky contacts were placed on a quaternary Al0.84In0.13Ga0.03N epilayer. The electrical and structural properties of the as-deposited Pt/Au, Ni/Au, Ni/Pt/Au and annealed Ni/Pt/Au Schottky contacts were investigated as a func
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b035ee56478caeba172101ce67f52326
https://aperta.ulakbim.gov.tr/record/69055
https://aperta.ulakbim.gov.tr/record/69055
Autor:
Gokhan Kurt, Turkan Gamze Ulusoy Ghobadi, Sertaç Ural, Ekmel Ozbay, Ömer Ahmet Kayal, Mustafa Kemal Öztürk, Bayram Butun, Mehmet Kabak, Melisa Ekin Gulseren
Publikováno v:
Solid-State Electronics
We demonstrate the electrical performances of an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (Ig). A low gate leakage current as low as the order of 10−11 A/mm was achieved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f61b842f730d9abaa3873e7271dd71b
https://aperta.ulakbim.gov.tr/record/70709
https://aperta.ulakbim.gov.tr/record/70709
Autor:
Mustafa Kemal Öztürk, Bayram Butun, Gokhan Kurt, Mehmet Kabak, Sertaç Ural, Ömer Ahmet Kayal, Melisa Ekin Gulseren, Gurur Salkim, Ekmel Ozbay
Publikováno v:
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019)
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019)
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c2a57be25dd96f862b1632d63e6b6a2
https://aperta.ulakbim.gov.tr/record/72091
https://aperta.ulakbim.gov.tr/record/72091
Autor:
Sertaç Ural, Ömer Ahmet Kayal, Engin Arslan, Ekmel Ozbay, S¸emsettin Altındal, Mustafa Kemal Öztürk
Publikováno v:
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
The current-conduction mechanisms of the as-deposited and annealed at 450 °C (Ni/Pt) Schottky contacts on AlInGaN quaternary alloy have been investigated in the temperature range of 80–320 K. The zero-bias barrier height (BH) (ΦB0) and ideality f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e1faed67f84f250553a44ced210901d
https://doi.org/10.1116/1.5045259
https://doi.org/10.1116/1.5045259
Autor:
Gokhan Kurt, Melisa Ekin Gulseren, Gurur Salkim, Sertac Ural, Omer Ahmet Kayal, Mustafa Ozturk, Bayram Butun, Mehmet Kabak, Ekmel Ozbay
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019)
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment du
Externí odkaz:
https://doaj.org/article/5f220c2dc96e4d1191d32b2a27c4b853