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Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

Autor: Rasit Turan, Mustafa Karaman, Salar Habibpur Sedani, Ö. Tüzün Özmen, H. M. Şağban

WOS: 000485256900018 Aluminium induced crystallization (AIC) technique can be used to form the high-quality and large-grained polycrystalline silicon (poly-Si) thin films, which are with the thickness of similar to 200 nm and used as a seed layer, on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96353f777674b0f43f4389ce540ff642
https://hdl.handle.net/20.500.12684/4577

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Akademický článek

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Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

Autor: İlke Taşçıoğlu, E. Yağlıoğlu, Ö. Tüzün Özmen, H. M. Şağban, Ş. Altındal

Taşçıoğlu, İlke (Arel Author)
In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) sub

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca75fe6fe8794faa05b9807dae85873c
https://hdl.handle.net/20.500.12684/6014

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Thin film silicon solar cells by AIC on foreign substrates

Autor: Ö. Tüzün, P. Prathap, D. Madi, Abdelilah Slaoui

Publikováno v: Solar Energy Materials and Solar Cells. 95:S44-S52

This paper presents the fabrication of thin film crystalline silicon solar cells on foreign substrates like alumina, glass–ceramic (GC) and metallic foils (ferritic steel—FS) using seed layer approach, which employs aluminium induced crystallisat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c50a1a69bd6d68039df8f04aef78ff71
https://doi.org/10.1016/j.solmat.2010.11.035

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Solid phase epitaxy on N-type polysilicon films formed by aluminium induced crystallization of amorphous silicon

Autor: S. Roques, Dominique Ballutaud, Ö. Tüzün, François Jomard, Abdelilah Slaoui, A. Focsa

Publikováno v: Thin Solid Films. 517:6358-6363

In this work, undoped amorphous silicon layers were deposited on n-type AIC seed films and then annealed at different temperatures for epitaxial growth. The epitaxy was carried out using halogen lamps (rapid thermal process or RTP) or a tube conventi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b725dd58d1efe91226c6a9d16855135
https://doi.org/10.1016/j.tsf.2009.02.091

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SYNTHESIS, MOLECULAR MODELLING AND CHOLINE ESTERASE ENZYME INHIBITORY ACTIVITY OF NOVEL ENAMINONE DERIVATIVES OF SULFONAMIDES.

Autor: Bhat, Mashooq A.¹ mabhat@ksu.edu.sa, Tüzün, Burak², Koyuncu, Ismail³, Temiz, Ebru⁴, Taslimi, Parham⁵, Naglah, Ahmed M.¹, Al-Omar, Mohamed A.¹, Džudžević-Čančar, Hurija⁶

Publikováno v: Bulletin of the Chemical Society of Ethiopia. 2024, Vol. 38 Issue 5, p1351-1368. 18p.

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EBSD analysis of polysilicon films formed by aluminium induced crystallization of amorphous silicon

Autor: Ivan Gordon, P.C. Montgomery, Claire Maurice, Guy Beaucarne, A. Slaoui, Jef Poortmans, A. Focsa, Ö. Tüzün, J. M Auger

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2008, 516 (20), pp.6882-6887. ⟨10.1016/j.tsf.2007.12.105⟩

Proceedings on Advanced Materials and Concepts for Photovoltaics EMRS 2007 Conference, Strasbourg, France; International audience; Among the methods for enlarging the grain size of polycrystalline silicon (poly-Si) thin films, aluminium induced cryst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1929bad880b2f2a3252764e023668cd9
https://doi.org/10.1016/j.tsf.2007.12.105

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F4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

Autor: E. Yağlıoğlu, Ö. Tüzün Özmen

WOS: 000345124600070 In this study, we investigate some main electrical parameters of the gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester:2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon (Au/P3HT:PCBM:F4-TCNQ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7e6134dd1cc3d3d2cd28dd43ae50556
https://hdl.handle.net/20.500.12684/5945

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