Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Ö. Bayraklı Sürücü"'
Publikováno v:
Physica B: Condensed Matter. 570:246-253
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8876413c2ca791918d0faf57df2c6cdf
https://doi.org/10.1016/j.physb.2019.06.024
https://doi.org/10.1016/j.physb.2019.06.024
Autor:
Ö. Bayraklı Sürücü
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:19270-19278
WOS: 000492443000014 The main focus of this work is the structural and optical characterization of Ga-doped ZnO (GZO) thin film and determination of the device behavior of In/GZO/Si/Al diode. GZO thin films were deposited by RF magnetron sputtering t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dea407275e42ddecc2005a0e1f47c288
https://doi.org/10.1007/s10854-019-02286-w
https://doi.org/10.1007/s10854-019-02286-w
Publikováno v:
Bulletin of Materials Science. 42
$$\hbox {Cu}_{{2}}\hbox {ZnSnTe}_{4}$$ (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef0fa7c452ecca2133ed96ac4206fe1
https://doi.org/10.1007/s12034-018-1713-0
https://doi.org/10.1007/s12034-018-1713-0
Autor:
E. H. Ciftpinar, Ç. Erçelebi, M. Terlemezoglu, C. Dogru, Ö. Bayraklı Sürücü, Hasan Hüseyin Güllü, Mehmet Parlak
WOS: 000472079200036 The focus of this study is the characterization of Cu2ZnSn(S,Se)(4) (CZTSSe) thin films and fabrication of CZTSSe solar cell in superstrate configuration. In this work, superstrate-type configuration of glass/ITO/CdS/CZTSSe/Au wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16d5b2168a2c26088a1d3ba3bdd89c25
https://hdl.handle.net/20.500.12513/2253
https://hdl.handle.net/20.500.12513/2253
In this study, temperature-dependent current–voltage (I–V), frequency-dependent capacitance–voltage (C–V) and conductance–voltage $$(G/\omega{-}V)$$ measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38bc069e585da19b2d15133de534ef83
https://hdl.handle.net/20.500.12513/2251
https://hdl.handle.net/20.500.12513/2251
In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e4b8e08eb68fb4635b694655d4ad8ce
https://hdl.handle.net/11491/6337
https://hdl.handle.net/11491/6337
Autor:
Ö. Bayraklı Sürücü, Mehmet Parlak, M. Terlemezoglu, Mehmet Işik, S. Delice, Hasan Hüseyin Güllü, Nizami Gasanly
Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400–1000 nm. Transmission spectra exhibited sharp d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9171d7cf797baae0eabf0c7b57dccd1
https://hdl.handle.net/11491/6314
https://hdl.handle.net/11491/6314
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.