Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Épitaxie par jets moléculaires"'
Autor:
Harikumar, Anjali
Publikováno v:
Physique [physics]. Université Grenoble Alpes [2020-..], 2022. Français. ⟨NNT : 2022GRALY039⟩
This project is a contribution to the development of high-brightness, mercury-free, 100% recyclable and high-gloss ultraviolet (UV) lamps for disinfection at 270 nm. The performance of AlGaN-based UV LEDs remains limited by carrier injection problems
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3515::81d712ee91d8150f43156c8d5fb4a82a
https://theses.hal.science/tel-03813791
https://theses.hal.science/tel-03813791
Autor:
Lépinau, Romaric de
Publikováno v:
Micro and nanotechnologies/Microelectronics. Université Paris-Saclay, 2020. English. ⟨NNT : 2020UPASS090⟩
Nanowires (NW) epitaxially grown on Si substrate are efficient light absorbers and allow to integrate high-quality III-V materials on Si by preventing defects induced by the lattice-mismatch between both materials. They provide a way to fabricate tan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______212::dc819578a5823e882a04c76f004833d3
https://tel.archives-ouvertes.fr/tel-02985184/document
https://tel.archives-ouvertes.fr/tel-02985184/document
Autor:
Lépinau, Romaric de
Publikováno v:
Micro and nanotechnologies/Microelectronics. Université Paris-Saclay, 2020. English. ⟨NNT : 2020UPASS090⟩
Nanowires (NW) epitaxially grown on Si substrate are efficient light absorbers and allow to integrate high-quality III-V materials on Si by preventing defects induced by the lattice-mismatch between both materials. They provide a way to fabricate tan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2592::dc819578a5823e882a04c76f004833d3
https://tel.archives-ouvertes.fr/tel-02985184/document
https://tel.archives-ouvertes.fr/tel-02985184/document
Autor:
Masset, Gauthier
Publikováno v:
Materials Science [cond-mat.mtrl-sci]. Université de Lorraine, 2020. English. ⟨NNT : 2020LORR0279⟩
Recently, a new origin for ferroelectricity has been discovered and studied in perovskite superlattices ABO₃/A'BO₃, (ABO₃ with A = rare earth or alkaline earth, B = 3d, 4d or 5d transition metal). This phenomenon, called improper hybrid ferroel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5ec659b1155e4ebcadb0f08f5ea1f84a
https://hal.univ-lorraine.fr/tel-03285413
https://hal.univ-lorraine.fr/tel-03285413
Autor:
Le Biavan, Nolwenn
Publikováno v:
Physics [physics]. COMUE Université Côte d'Azur (2015-2019), 2019. English. ⟨NNT : 2019AZUR4070⟩
The Terahertz domain (THz), situated between the visible and microwave energy range, turns out to be very promissing in terms of applications. However its application potential is not fully used because of the lack for compact sources able to cover a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______212::76134c41735cb3e1bb0835f2c8879e38
https://tel.archives-ouvertes.fr/tel-02736475/file/2019AZUR4070.pdf
https://tel.archives-ouvertes.fr/tel-02736475/file/2019AZUR4070.pdf
Autor:
Le Biavan, Nolwenn
Publikováno v:
Physics [physics]. COMUE Université Côte d'Azur (2015-2019), 2019. English. ⟨NNT : 2019AZUR4070⟩
The Terahertz domain (THz), situated between the visible and microwave energy range, turns out to be very promissing in terms of applications. However its application potential is not fully used because of the lack for compact sources able to cover a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2592::76134c41735cb3e1bb0835f2c8879e38
https://tel.archives-ouvertes.fr/tel-02736475/file/2019AZUR4070.pdf
https://tel.archives-ouvertes.fr/tel-02736475/file/2019AZUR4070.pdf
Autor:
Siladie, Alexandra-Madalina
Publikováno v:
Materials Science [cond-mat.mtrl-sci]. Université Grenoble Alpes, 2019. English. ⟨NNT : 2019GREAY059⟩
Because of their band gap value extending from 0.68 eV (for InN) up to 3.5 eV (GaN) and 6.2 eV (AlN), nitride family is potentially well adapted to the realization of light emitting diodes (LEDs) or detectors in a wavelength range spanning from infra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::422a1a6db1b4074f6fe26e1d12e80351
https://theses.hal.science/tel-02613852/document
https://theses.hal.science/tel-02613852/document
Autor:
Siladie, Alexandra-Madalina
Publikováno v:
Materials Science [cond-mat.mtrl-sci]. Université Grenoble Alpes, 2019. English. ⟨NNT : 2019GREAY059⟩
Because of their band gap value extending from 0.68 eV (for InN) up to 3.5 eV (GaN) and 6.2 eV (AlN), nitride family is potentially well adapted to the realization of light emitting diodes (LEDs) or detectors in a wavelength range spanning from infra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______212::422a1a6db1b4074f6fe26e1d12e80351
https://tel.archives-ouvertes.fr/tel-02613852
https://tel.archives-ouvertes.fr/tel-02613852
Autor:
Brault, Julien
Publikováno v:
Matériaux. Université Côte d'Azur, France; UFR Sciences-Ecole Doctorale de Sciences Fondamentales et Appliquées, 2018
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2592::ce5d170c02734e1fba1584c1523b95e9
https://tel.archives-ouvertes.fr/tel-02531407
https://tel.archives-ouvertes.fr/tel-02531407
Autor:
Chaluvadi, Sandeep kumar
Nous présentons une étude des effets de contrainte induits par l’épitaxie dans des couches minces La1-xSrxMnO3 (LSMO) (001) (x = 0.33) pour 3 épaisseurs de films (50, 25 et 12 nm) déposés par Ablation Laser Pulsée (PLD) sur différents subst
Externí odkaz:
http://www.theses.fr/2017NORMC248/document