Výsledky vyhledávání - "É. G. Manoĭlov"

Exciton states and photoluminescence of silicon and germanium nanocrystals in an Al2O3 matrix

Autor: Yu. V. Kryuchenko, I. M. Kupchak, É. G. Manoĭlov, E. V. Begun, A. V. Sachenko, D. V. Korbutyak, E. B. Kaganovich

Publikováno v: Semiconductors. 42:1194-1199

This paper deals with the theoretical and experimental study of radiative processes in zero-dimensional Si and Ge nanostructures consisting of a system of Si or Ge nanocrystals embedded in an Al2O3 matrix. The Al2O3 films containing Si or Ge quantum

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73791d930e8186b9849bb6355f2c4130
https://doi.org/10.1134/s1063782608100096

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Infrared transmittance spectra of photoluminescent oxide films with Si and Ge quantum dots formed by pulsed laser ablation

Autor: E. V. Begun, S. A. Zlobin, Igor Lisovskyy, E. B. Kaganovich, É. G. Manoĭlov

Publikováno v: Semiconductors. 42:545-549

The composition of photoluminescent films containing low-dimensional silicon and germanium is studied. Si, Ge, and Al oxide films containing Si and Ge quantum dots are produced by pulsed laser ablation. The infrared transmittance spectra in the range

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2871f233d0dffdb1cc7479ea97617616
https://doi.org/10.1134/s1063782608050102

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Photoluminescence of nanocrystalline silicon films formed by pulsed laser-assisted deposition with the introduction of carbon

Autor: E. B. Kaganovich, S. A. Zlobjn, É. G. Manoĭlov, I. P. Lisovskiĭ

Publikováno v: Semiconductors. 40:443-448

The effect of carbon on the photoluminescent properties of films consisting of quantum-dimensional Si nanocrystals in the SiOx (x → 2) matrix is studied. The spectra of time-resolved photoluminescence in the photon-energy range of 1.4–3.2 eV and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ee775973e4b382941a7338dbb97d4697
https://doi.org/10.1134/s1063782606040130

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A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon

Autor: A. A. Evtukh, N. A. Semenenko, E. B. Kaganovich, É. G. Manoĭlov

Publikováno v: Semiconductors. 40:175-179

Electroluminescent structures that emit in the visible region of the spectrum and are based on porous silicon (por-Si) formed on the p-Si substrate electrolytically using an internal current source are fabricated. The photoluminescent and electrolumi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bcfb18caec5545824d24ede2cd13e37d
https://doi.org/10.1134/s1063782606020126

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