Zobrazeno 1 - 10
of 122
pro vyhledávání: '"Åsa Haglund"'
Autor:
Lars Persson, Filip Hjort, Giulia Cardinali, Johannes Enslin, Tim Kolbe, Tim Wernicke, Michael Kneissl, Joachim Ciers, Åsa Haglund
Publikováno v:
Laser and Photonics Reviews (1863-8880) vol.In Press(2023)
A concept for vertical-cavity surface-emitting lasers (VCSELs) is proposed and demonstrated to obtain a lasing wavelength with unprecedented temperature stability. The concept is based on incorporating a dielectric material with a negative thermo-opt
Autor:
Robert Kudrawiec, Jan Suffczyński, Tomasz Czyszanowski, Paweł Modrzyński, Łucja Marona, Marcin Gȩbski, Tsung-Scheng Chang, Magdalena Marciniak, Krzysztof Sawicki, Matusz Gramala, Filip Hjort, Jan Muszalski, Artur Broda, Rafał Bożek, James A. Lott, Wojciech Pacuski, Tien-Chang Lu, Åsa Haglund
Publikováno v:
ACS Photonics. 8:3173-3184
Monolithic high contrast gratings (MHCGs) composed of a one-dimensional grating patterned in a monolithic layer provide up to 100% optical power reflectance and can be fabricated in almost any semiconductor and dielectric material used in modern opto
Autor:
Tim Kolbe, Filip Hjort, Markus R. Wagner, Arne Knauer, Ines Häusler, Munise Cobet, Felix Nippert, Johan S. Gustavsson, Johannes Enslin, Michael Kneissl, Åsa Haglund, Tim Wernicke, Michael Alexander Bergmann
Publikováno v:
ACS Photonics
Ultraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) ma
Autor:
Michael A. Bergmann, Johannes Enslin, Martin Guttmann, Luca Sulmoni, Neysha Lobo-Ploch, Tim Kolbe, Tim Wernicke, Michael Kneissl, Åsa Haglund
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Autor:
Ehsan Hashemi, Tsu Chi Chang, Åsa Haglund, Johan S. Gustavsson, Kuo-Bin Hong, Jörgen Bengtsson, Tien-Chang Lu
Publikováno v:
ACS Photonics. 7:861-866
We demonstrate the first electrically injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with a TiO2 high-index-contrast grating (HCG) as the top mirror. Replacing the top distribu...
Autor:
Michael Alexander Bergmann, Filip Hjort, Nicolas Grandjean, Jean-François Carlin, Joachim Ciers, Åsa Haglund
Publikováno v:
Gallium Nitride Materials and Devices XVI.
III-nitride membranes offer novel device designs in photonics, electronics and optomechanics. However, substrate removal often leads to a rough back surface, which degrades device performance. Here, we demonstrate GaN membranes with atomically smooth
Autor:
Michael Kneissl, Giulia Cardinali, Nando Prokop, Tim Kolbe, Markus R. Wagner, Åsa Haglund, Johannes Enslin, Felix Nippert, Tim Wernicke, Michael Alexander Bergmann, Filip Hjort, Joachim Ciers, Munise Cobet, Johan S. Gustavsson
Publikováno v:
Gallium Nitride Materials and Devices XVI.
We will give an overview of the progress in ultraviolet-emitting vertical-cavity surface-emitting lasers (VCSELs) and their potential applications in areas such as disinfection and medical therapy. This includes our demonstration of the shortest wave
Autor:
Martin Guttmann, Luca Sulmoni, Tim Kolbe, Åsa Haglund, Neysha Lobo-Ploch, Johannes Enslin, Tim Wernicke, Michael Alexander Bergmann, Michael Kneissl, Filip Hjort
Publikováno v:
Gallium Nitride Materials and Devices XVI.
We here demonstrate thin-film flip-chip (TFFC) ultraviolet-B light-emitting diodes (LEDs) fabricated by a standard LED process and followed by a substrate removal based on selective electrochemical etching of an n-doped multilayered Al0.11Ga0.89N/Al0
Autor:
Ehsan Hashemi, Åsa Haglund, Tsu Chi Chang, Jörgen Bengtsson, Johan S. Gustavsson, Tien-Chang Lu
Publikováno v:
Gallium Nitride Materials and Devices XV.
We demonstrate the first electrically injected GaN-based VCSEL with a TiO2 high-contrast grating (HCG) as the top mirror. The TiO2-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 μ
Autor:
Olof Bäcke, Ehsan Hashemi, David Adolph, Mats Halvarsson, Åsa Haglund, Tommy Ive, Filip Hjort
Publikováno v:
IEEE Journal of Quantum Electronics. 54:1-6
We have demonstrated an electrically conductive ZnO/GaN multilayer structure using hybrid plasma-assisted molecular beam epitaxy. Electrical I-V characteristics were measured through the top three pairs of a six pair ZnO/GaN sample. The total measure