Zobrazeno 1 - 10
of 89 074
pro vyhledávání: '"(Si)Ge"'
Autor:
Huckemann, Till, Muster, Pascal, Langheinrich, Wolfram, Brackmann, Varvara, Friedrich, Michael, Komerički, Nikola D., Diebel, Laura K., Stieß, Verena, Bougeard, Dominique, Dahl, Claus, Schreiber, Lars R., Bluhm, Hendrik
This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal budget. The devi
Externí odkaz:
http://arxiv.org/abs/2410.16913
Publikováno v:
Journal of Atomic & Molecular Physics (1000-0364). Aug2024, Vol. 41 Issue 4, p1-7. 7p.
Autor:
Zhao, Liuhuan1 (AUTHOR), Huang, Lei2 (AUTHOR) huanglei031800@163.com, Wang, Ke3 (AUTHOR), Mu, Weihua4 (AUTHOR) muwh@ucas.ac.cn, Wu, Qiong1 (AUTHOR), Ma, Zhen5 (AUTHOR) 18255183270@163.com, Ren, Kai1 (AUTHOR) muwh@ucas.ac.cn
Publikováno v:
Molecules. Aug2024, Vol. 29 Issue 16, p3823. 11p.
In the past decade, it has been demonstrated that monolayers of metal dichalcogenides are well-suited for thermoelectric applications. ZrX2N4 (X = Si, Ge) is a reasonable choice for thermoelectric applications when considering a favorable value of th
Externí odkaz:
http://arxiv.org/abs/2408.03971
Autor:
Mao, Huican, Zhu, Xiang, Li, Guangmao, Pang, Jie, Hao, Junfeng, Wang, Liqi, Yu, Hailong, Shi, Youguo, Wu, Fan, Pan, Shilie, Xiao, Ruijuan, Li, Hong, Chen, Liquan
Combining high-throughput first-principles calculations and experimental measurements, we have identified a novel family of fast lithium-ion chalcogenide conductors in Li$_2$BMQ$_4$ (2114, B = Ca, Sr and Ba; M = Si, Ge and Sn; Q = O, S and Se) system
Externí odkaz:
http://arxiv.org/abs/2405.03466
The newly emerged two-dimensional (2D) materials family of MSi2N4, where M is a transition metal atom (i.e., Mo, W, etc.), has the potential to be named after the conventional and very popular transition metal di-chalcogenides (TMDC), which got their
Externí odkaz:
http://arxiv.org/abs/2405.09498
Autor:
Barakat, Nourhan1,2 (AUTHOR), Akkoush, A.1 (AUTHOR), El Haj Hassan, Fouad2,3 (AUTHOR), Kazan, Michel1,4 (AUTHOR) mk140@aub.edu.lb
Publikováno v:
Journal of Applied Physics. 10/28/2024, Vol. 136 Issue 16, p1-10. 10p.
Autor:
Peng, Yi1 (AUTHOR), Tian, Hongyan2 (AUTHOR), Yao, Mingjia2 (AUTHOR), Li, Xuli2 (AUTHOR), Tang, Xinyi2 (AUTHOR), Jiao, Ju2 (AUTHOR), Zhu, Qianqian2 (AUTHOR) pengzhu2022@yeah.net, Cao, Juexian3 (AUTHOR)
Publikováno v:
Scientific Reports. 9/29/2024, Vol. 14 Issue 1, p1-10. 10p.
Autor:
Sharma, Vikash, Ramakrishnan, Sitaram, Jayakrishnan, S. S., Kotla, Surya Rohith, Maiti, Bishal, Eisele, Claudio, Agarwal, Harshit, Noohinejad, Leila, Tolkiehn, M., Bansal, Dipanshu, van Smaalen, Sander, Thamizhavel, Arumugam
Charge density wave (CDW) systems are proposed to exhibit application potential for electronic and optoelectronic devices. Therefore, identifying new materials that exhibit a CDW state at room temperature is crucial for the development of CDW-based d
Externí odkaz:
http://arxiv.org/abs/2403.08660
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