Zobrazeno 11 - 20
of 374
pro vyhledávání: '"Youguang Zhang"'
Publikováno v:
IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing, Vol 14, Pp 9624-9635 (2021)
The wind and wave derived from the scatterometer and altimeter on board the Chinese Haiyang-2B (HY-2B) satellite were systemically evaluated in this article. The analysis of matchups between advanced scatterometer and the winds from HY-2B scatteromet
Externí odkaz:
https://doaj.org/article/e6a3823670be48b1af2370e6588424ad
Publikováno v:
European Journal of Remote Sensing, Vol 54, Iss 1, Pp 318-337 (2021)
In this study, a re-tuned algorithm based on the geophysical model function (GMF) C-SARMOD2 is proposed to retrieve wind speed from Synthetic Aperture Radar (SAR) imagery collected by the Chinese C-band Gaofen-3 (GF-3) SAR. More than 10,000 Vertical-
Externí odkaz:
https://doaj.org/article/06b42bf5f1014014a8c0b1b9e590a783
Autor:
Sa Tu, Timothy Ziman, Guoqiang Yu, Caihua Wan, Junfeng Hu, Hao Wu, Hanchen Wang, Mengchao Liu, Chuanpu Liu, Chenyang Guo, Jianyu Zhang, Marco A. Cabero Z., Youguang Zhang, Peng Gao, Song Liu, Dapeng Yu, Xiufeng Han, Ingrid Hallsteinsen, Dustin A. Gilbert, Mamoru Matsuo, Yuichi Ohnuma, Peter Wölfle, Kang L. Wang, Jean-Philippe Ansermet, Sadamichi Maekawa, Haiming Yu
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Antiferromagnetic materials are potentially useful for spintronic applications. Here, the authors report high thermoelectric power value of 390 μV/K Seebeck coefficient in IrMn-based half magnetic tunnel junctions at room temperature.
Externí odkaz:
https://doaj.org/article/3f0d3498d8f34d278a56988c3e76f4e0
Autor:
Yuan Cao, Xinhe Wang, Xiaoyang Lin, Wei Yang, Chen Lv, Yuan Lu, Youguang Zhang, Weisheng Zhao
Publikováno v:
IEEE Access, Vol 8, Pp 70488-70495 (2020)
The key to achieving high-quality and practical van der Waals heterostructure devices made from various two-dimensional (2D) materials lies in the efficient control over clean and flexible interfaces. Inspired by the “movable-type printing”, one
Externí odkaz:
https://doaj.org/article/9b47799f98a04ec395dbb00436ec14f0
Autor:
Jiang Nan, Kun Zhang, Yue Zhang, Shaohua Yan, Zhizhong Zhang, Zhenyi Zheng, Guanda Wang, Qunwen Leng, Youguang Zhang, Weisheng Zhao
Publikováno v:
IEEE Access, Vol 8, Pp 87584-87591 (2020)
Magnetoresistance (MR) effects have been intensively investigated and widely recognized as an effective path for realizing information sensing, storage, and processing. In particular, giant MR (GMR) effect discovered in ferromagnetic/nonmagnetic mult
Externí odkaz:
https://doaj.org/article/8d2d77d07aa145188ced4bc23f2a1d79
Autor:
Biao Pan, Deming Zhang, Xueying Zhang, Haotian Wang, Jinyu Bai, Jianlei Yang, Youguang Zhang, Wang Kang, Weisheng Zhao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 529-533 (2019)
Novel skyrmion-magnetic tunnel junction (SK-MTJ) devices were investigated for the first time to implement the ternary neural networks (TNN). In the SK-MTJ, an extra magnetoresistance state beyond binary parallel and anti-parallel MTJ states was achi
Externí odkaz:
https://doaj.org/article/8a75cd72bd4c4bc49c73d6d52b1ee71a
Publikováno v:
IEEE Access, Vol 7, Pp 110463-110471 (2019)
Emerging Magnetic Random-Access Memory (MRAM) has shown a great potential to replace Static-RAM (SRAM) and Dynamic-RAM (DRAM) in the working memories including Cache and main memory. MRAM benefits from its high-density, fast speed, low standby power,
Externí odkaz:
https://doaj.org/article/621f54b8c2de43c79fc30c81dce054d6
Autor:
Chuanpu Liu, Jilei Chen, Tao Liu, Florian Heimbach, Haiming Yu, Yang Xiao, Junfeng Hu, Mengchao Liu, Houchen Chang, Tobias Stueckler, Sa Tu, Youguang Zhang, Yan Zhang, Peng Gao, Zhimin Liao, Dapeng Yu, Ke Xia, Na Lei, Weisheng Zhao, Mingzhong Wu
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
Short-wavelength spin waves with high group velocity are one of the key ingredients for the spin-wave based memory-logics. Here the authors demonstrate the propagation of spin waves with wavelength down to 50 nm and group velocity up to 2600 m s−1
Externí odkaz:
https://doaj.org/article/23dac412eb1b47f9b75e67fbcb7f5be4
Autor:
Mengxing Wang, Wenlong Cai, Kaihua Cao, Jiaqi Zhou, Jerzy Wrona, Shouzhong Peng, Huaiwen Yang, Jiaqi Wei, Wang Kang, Youguang Zhang, Jürgen Langer, Berthold Ocker, Albert Fert, Weisheng Zhao
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories. Here the authors achieve the spin-transfer-torque switching in perpendicular magnetic tunne
Externí odkaz:
https://doaj.org/article/ab6cad3ba67342129c179510c5c1f461
Autor:
Tianqi Gao, Lang Zeng, Deming Zhang, Xiaowan Qin, Mingzhi Long, Yue Zhang, Xiaoyang Lin, Youguang Zhang, Weisheng Zhao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 245-249 (2018)
Since Internet of Things devices should ideally be self-powered, there is great demand for devices with ultra-low operating voltages that can run on energy harvested from a noisy environment. In this paper, a novel all spin logic (ASL) device with vo
Externí odkaz:
https://doaj.org/article/ac38abce86c34c96963bd8e7dfaa34e3