Zobrazeno 41 - 42
of 42
pro vyhledávání: '"Ye-Ram Kim"'
Autor:
Ye-Ram Kim, Jae-Ho Hong, Jun-Sik Yoon, Eui-Young Jeong, Jeong-Soo Lee, Yoon-Ha Jeong, Sanghyun Lee
Publikováno v:
Japanese Journal of Applied Physics. 54:04DC06
Source/drain series resistances (Rsd) of n- and p-type double-gate fin field-effect transistors (FinFETs) were successfully extracted using the methods applicable to short channel devices. Rsd is decomposed into spreading, sheet, and contact resistan
Autor:
Jun-Sik Yoon, Eui-Young Jeong, Sang-Hyun Lee, Ye-Ram Kim, Jae-Ho Hong, Jeong-Soo Lee, Yoon-Ha Jeong
Publikováno v:
Japanese Journal of Applied Physics; Apr2015, Vol. 54 Issue 4S, p1-1, 1p