Zobrazeno 241 - 250
of 395
pro vyhledávání: '"Xi Mao"'
Publikováno v:
Solid State Communications. 87:1005-1007
Light emissions of porous silicon were studied by photoluminescence (PL) and photoluminescence excitation spectroscopies (PLE). The results suggest the existence of midgap localized states and provide strong evidence of lattice relaxation effect. Vis
Autor:
Zhao-Hua Cheng, Ming-Xi Mao, Yi-De Zhang, Changgeng Zhang, Xiaoming Liu, Desheng Xue, Feifei Li
Publikováno v:
Journal of Applied Physics. 73:6983-6985
The Fe–B amorphous alloys powders with high boron concentration can be prepared by borohydride reduction (BHR). By adjusting technological factors, the Fe100−xBx amorphous powders with compositions ranging from x=17 to 40 can be easily obtained,
Autor:
Yin Zhang, Feifei Li, L. Y. Yang, B. G. Shen, Zhao-Hua Cheng, Chun-Li Yang, Ming-Xi Mao, Changgeng Zhang
Publikováno v:
Journal of Applied Physics. 73:6980-6982
Until now, the origin of hard magnetic properties of rapidly quenched Nd-Fe-B alloys with lower Nd concentration is not clear. In this paper, the phase compositions of rapidly quenched Nd4Fe77.5B18.5 alloys annealed under different conditions have be
Preparation and Mössbauer study of Gd2Fe17Cx(x≤2) with higher carbon concentration by melt quenching
Autor:
Bao-gen Shen, Yi-De Zhang, Ji-Jun Sun, Lin‐shu Kong, Xiao-Zhou Zhang, Shi-Hui Ge, Lei Cao, Desheng Xue, Ming-Xi Mao, Fashen Li
Publikováno v:
Journal of Applied Physics. 73:5893-5895
Carbides Gd2Fe17Cx with composition up to x=2 were successfully prepared. The single phase Gd2Fe17Cx (x=1.5, 2.0) carbides with higher carbon concentration were first obtained by the melt quenching technique. 57Fe Mossbauer spectra of all compounds w
Publikováno v:
Journal of Organic Chemistry; 11/6/2015, Vol. 80 Issue 21, p11108-11114, 7p
Publikováno v:
Physical review letters. 76(4)
Autor:
Kai Yang, Zhizhong Chen, Z. C. Huang, Ben Shen, Rong Zhang, J. C. Chen, Xi-Mao Bao, Youdou Zheng, L. Zang
Publikováno v:
MRS Proceedings. 449
The properties of photoconductive ultraviolet detector based on GaN epilayer grown on 6H-SiC substrate by metalorganic chemical vapor deposition were investigated in this paper. We obtained the detectable energy span of the device up to ultraviolet b
Publikováno v:
MRS Proceedings. 438
The SiO2 films thermally grown on crystalline Si were implanted with Ge ions at 60 keV with doses of l×1015 cm-2 and l×1016 cm-2, followed by thermal annealing at various temperatures. Under an ultraviolet excitation of 240 nm, the films exhibit in
Autor:
Du, Tao, Zhang, Shun, Cui, Xi-Mao, Hu, Ren-Hao, Wang, Hai-Yan, Jiang, Jian-Juan, Zhao, Jun, Zhong, Lan, Jiang, Xiao-Hua
Publikováno v:
Canadian Journal of Gastroenterology and Hepatology; 2023, Vol. 2023 Issue: 1