Zobrazeno 61 - 70
of 74
pro vyhledávání: '"Utpal S. Joshi"'
Autor:
Tetsuya Hasegawa, Y. Yamamoto, Masato Kakihana, Yuji Matsumoto, W.Q. Lu, Hideomi Koinuma, Valery Petrykin, Utpal S. Joshi
Publikováno v:
Thin Solid Films. 486:79-81
Epitaxial thin films of RuSr 2 (Eu 1.5 Ce 0.5 )Cu 2 O 10− δ (Ru-1222), which attracts much attention as a magnetic superconductor, were grown on SrTiO 3 (001) substrate by a “flux-mediated reactive solid phase epitaxy” technique. The films wer
Publikováno v:
AIP Conference Proceedings.
Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalo
Publikováno v:
AIP Conference Proceedings.
All oxide thin film transistors (TFT) with zinc oxide active layer were fabricated by chemical solution deposition (CSD) using aqueous solutions on glass substrate. Thin film transistors (TFTs) with amorphous zinc oxide as channel layers and poly-vin
Publikováno v:
AIP Conference Proceedings.
All oxide thin film transistors (TFT) with indium gallium zinc oxide (IGZO) active layer were fabricated by chemical solution deposition (CSD) using aqueous solutions on glass substrate. Bottom source - drain and top gate electrodes were fabricated b
Publikováno v:
Solid State Communications. 98:1095-1098
The structural and superconducting properties of (Er1−yCay)Ba2 (Cu1−xCox)3Oz samples are investigated using X-ray diffraction, resistivity and oxygen content measurements. The effect of increasing Co concentration in ErBa2(Cu1−xCox)3Oz lowers t
Publikováno v:
Physica C: Superconductivity. 261:90-96
The structural and superconducting properties of (Er1−y−yCayHfx)Ba2Cu3Oz samples are investigated using X-ray diffraction, resistivity, AC susceptibility and oxygen-content measurements. The effect of increasing the Hf concentration in Er−xHfxB
Publikováno v:
Cryogenics. 35:61-65
Hf and Ca substituted samples with stoichiometric compositions (Y1 − xHfx)Ba2Cu3Oz with x = 0.0, 0.1, 0.2 and (Y0.85 − yCayHf0.15)Ba2Cu3Oz with y = 0.1, 0.2, 0.4, respectively, prepared under identical conditions have been characterized by d.c. m
Publikováno v:
AIP Conference Proceedings.
We report on the designing aspects and fabrication of low temperature atomic force microscope (AFM) to study the surface structures of nanomaterials. Several key features of design including liquid nitrogen reservoir, vacuum chamber, vibration isolat
Publikováno v:
AIP Conference Proceedings.
Resistance switching properties of nanostructured In2O3 films grown on Pt bottom electrode have been investigated for non volatile memory applications. Ag/In2O3/Pt/Ti/SiO2/Si heterostructures were fabricated by pulsed laser deposition and e-beam evap
Publikováno v:
Journal of Physics D: Applied Physics. 49:055301
Resistance switching and memory effects have been observed in a heterostructure consisting of BiFeO3 (BFO) on a LaNiO3 (LNO) conducting oxide bottom electrode fabricated by chemical solution deposition on quartz substrates. The phase purity and latti