Zobrazeno 41 - 50
of 1 271
pro vyhledávání: '"Scott, J. F."'
Publikováno v:
Physical Review B, 79, 104413 (2009)
We report the observation of spin-glass-like behavior and strong magnetic anisotropy in extremely smooth (~1-3 \AA) roughness) epitaxial (110) and (010) SrRuO3 thin films. The easy axis of magnetization is always perpendicular to the plane of the fil
Externí odkaz:
http://arxiv.org/abs/0707.1657
Autor:
Kawasaki, S., Catalan, G., Fan, H., Saad, M. M., Gregg, J. M., Correa-Duarte, M. A., Rybczynski, J., Morrison, F. D., Tatsuta, T., Tsuji, O., Scott, J. F.
The International Roadmap for Ferroelectric Memories requires three-dimensional integration of high-dielectric materials onto metal interconnects or bottom electrodes by 2010. We report the first integration of high-dielectric oxide films onto carbon
Externí odkaz:
http://arxiv.org/abs/0706.2998
Publikováno v:
Phys. Rev. Lett. 99, 167601 (2007)
Piezoelectricity is inherent only in noncentrosymmetric materials, but a piezoelectric response can also be obtained in centrosymmetric crystals if subjected to inhomogeneous deformation. This phenomenon, known as flexoelectricity, affects the functi
Externí odkaz:
http://arxiv.org/abs/0705.4254
Autor:
Palai, R., Katiyar, R. S., Schmid, H., Tissot, P., Clark, S. J., Robertson, J., Redfern, S. A. T., Scott, J. F.
Publikováno v:
Physical Review B, 77, 014110 (2008)
We show that epitaxial (001) thin films of multiferroic bismuth ferrite BiFeO3 are monoclinic at room temperature instead of tetragonal or Rhombohedral as reported earlier . We report a orthorhombic order-disorder beta-phase between 820C and 950C con
Externí odkaz:
http://arxiv.org/abs/0705.2883
Publikováno v:
Applied Physics Letters, 90, 262908 (2007)
Micro-Raman studies show that under ~700 kV/cm of d.c. voltage stressing for a few seconds, thin-film bismuth ferrite BiFeO3 phase separates into magnetite Fe3O4. No evidence is found spectroscopically of hemite alpha-Fe2O3, maghemite gamma-Fe2O3, or
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703388
Publikováno v:
J. Phys.: Condens. Matter 19 (2007) 132201.
Ferroelectric random access memory cells (FeRAMs) have reached 450 x 400 nm production (0.18 micron^2) at Samsung with lead zirconate-titanate (PZT), 0.13 micron^2 at Matsushita with strontium bismuth tantalate (SBT), and comparable sizes at Fujitsu
Externí odkaz:
http://arxiv.org/abs/cond-mat/0701177
Publikováno v:
Nature Materials 6 (2007) 348
Magnetoelectric coupling permits a magnetic order parameter to be addressed electrically or vice versa, and could find use in data storage, field sensors and actuators. Coupling constants for single phase materials such as chromium dioxide, boracites
Externí odkaz:
http://arxiv.org/abs/cond-mat/0609209
Autor:
Scott, J. F.
Early work by the author with Prof. Ishibashi [Scott et al., J. Appl. Phys. 64, 787 (1988)] showed that switching kinetics in ferroelectrics satisfy a constraint on current transients compatible with d = 2.5 dimensionality. At that time with no direc
Externí odkaz:
http://arxiv.org/abs/cond-mat/0609023
Publikováno v:
Journal of Physics: Condensed Matter 19, 022201 (2007)
We show how the periodicity of 180^{o} domains as a function of crystal thickness scales with the thickness of the domain walls both for ferroelectric and for ferromagnetic materials. We derive an analytical expression for the universal scaling facto
Externí odkaz:
http://arxiv.org/abs/cond-mat/0608338
Publikováno v:
J. Appl. Phys. 100, 114113 (2006)
We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at various tem
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607585