Zobrazeno 31 - 40
of 229
pro vyhledávání: '"Lortz, Rolf"'
Autor:
Xu, Shuigang, Shen, Junying, Long, Gen, Wu, Zefei, Bao, Zhi-qiang, Liu, Cheng-Cheng, Xiao, Xiao, Han, Tianyi, Lin, Jiangxiazi, Wu, Yingying, Lu, Huanhuan, Hou, Jianqiang, An, Liheng, Wang, Yuanwei, Cai, Yuan, Ho, K. M., He, Yuheng, Lortz, Rolf, Zhang, Fan, Wang, Ning
Publikováno v:
Phys. Rev. Lett. 118, 067702 (2017)
We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field.
Externí odkaz:
http://arxiv.org/abs/1701.00512
Akademický článek
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Akademický článek
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K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Shen, Junying, Lyu, Jian, Gao, Jason Z., Xie, Ying-Ming, Chen, Chui-Zhen, Cho, Chang-woo, Atanov, Omargeldi, Chen, Zhijie, Liu, Kai, Hu, Yajian J., Yip, King Yau, Goh, Swee K., He, Qing Lin, Pan, Lei, Wang, Kang L., Law, Kam Tuen, Lortz, Rolf
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 2020 Jan 01. 117(1), 238-242.
Externí odkaz:
https://www.jstor.org/stable/26897457
Autor:
Long, Gen, Xu, Shuigang, Shen, Junying, Hou, Jianqiang, Wu, Zefei, Han, Tianyi, Lin, Jiangxiazi, Wong, Wing Ki, Cai, Yuan, Lortz, Rolf, Wang, Ning
Publikováno v:
2D Mater. 3 031001 2016
We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nano
Externí odkaz:
http://arxiv.org/abs/1606.07552
Autor:
Zhang, Ying, Wong, Chi Ho, Shen, Junying, Sze, Sin Ting, Dong, Yan, Xu, Hui, Yan, Zifeng, Li, Yingying, Hu, Xijun, Lortz, Rolf
Sn is a well-known classical superconductor on the border between type I and type II with critical temperature of 3.722K and critical field of 0.031T. We show by means of specific heat and electric magneto-transport data that its critical parameters
Externí odkaz:
http://arxiv.org/abs/1601.05269
Autor:
Wong, Chi Ho, Lortz, Rolf
In this paper, we present a simple method to model the curvature activated phonon softening in a 2D superconducting layer. The superconducting transition temperature Tc in the case of a 2D rectangular sheet, a hollow cylinder and a hollow sphere of o
Externí odkaz:
http://arxiv.org/abs/1601.04777
Autor:
Long, Gen, Maryenko, Denis, Shen, Junying, Xu, Shuigang, Hou, Jianqiang, Wu, Zefei, Wong, Wing Ki, Han, Tianyi, Lin, Jiangxiazi, Cai, Yuan, Lortz, Rolf, Wang, Ning
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the phonon scatte
Externí odkaz:
http://arxiv.org/abs/1510.06518
Autor:
Cheng, Man-Kit, Liang, Jing, Lai, Ying-Hoi, Pang, Liang-Xi, Liu, Yi, Shen, Junying, Hou, Jianqiang, He, Qing Lin, Xu, Bochao, Chen, Junshu, Wang, Gan, Liu, Chang, Lortz, Rolf, Sou, Iam-Keong
We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic force micro
Externí odkaz:
http://arxiv.org/abs/1509.02694
Autor:
Zheng, Yan, Tam, Pok Man, Hou, Jianqiang, Böhmer, Anna E., Wolf, Thomas, Meingast, Christoph, Lortz, Rolf
Publikováno v:
Phys. Rev. B 93, 104516 (2016)
The hole doped Fe-based superconductors Ba$_{1-x}$A$_x$Fe$_2$As$_2$ (where A=Na or K) show a particular rich phase diagram. It was observed that an intermediate re-entrant tetragonal phase forms within the orthorhombic antiferromagnetically-ordered s
Externí odkaz:
http://arxiv.org/abs/1507.01651