Zobrazeno 71 - 80
of 75 784
pro vyhledávání: '"Li, Ying"'
Autor:
Zhou, Yuhong, Yang, Fubao, Xu, Liujun, Zhuang, Pengfei, Wang, Dong, Ouyang, Xiaoping, Li, Ying, Huang, Jiping
Thermal metamaterial represents a groundbreaking approach to control heat conduction, and, as a crucial component, thermal invisibility is of utmost importance for heat management. Despite the flourishing development of thermal invisibility schemes,
Externí odkaz:
http://arxiv.org/abs/2309.04745
Autor:
Huang, Wei, Qin, Haotong, Liu, Yangdong, Liang, Jingzhuo, Zhang, Yulun, Li, Ying, Liu, Xianglong
Low-bit quantization emerges as one of the most promising compression approaches for deploying deep neural networks on edge devices. Mixed-precision quantization leverages a mixture of bit-widths to unleash the accuracy and efficiency potential of qu
Externí odkaz:
http://arxiv.org/abs/2309.01945
The Gaussian process state-space model (GPSSM) has attracted extensive attention for modeling complex nonlinear dynamical systems. However, the existing GPSSM employs separate Gaussian processes (GPs) for each latent state dimension, leading to escal
Externí odkaz:
http://arxiv.org/abs/2309.01074
Stable diffusion, a generative model used in text-to-image synthesis, frequently encounters resolution-induced composition problems when generating images of varying sizes. This issue primarily stems from the model being trained on pairs of single-sc
Externí odkaz:
http://arxiv.org/abs/2308.16582
Autor:
Zhao, Jihong, Li, Ying
This work is concerned with the global existence of large solutions to the three-dimensional dissipative fluid-dynamical model, which is a strongly coupled nonlinear nonlocal system characterized by the incompressible Navier--Stokes--Poisson--Nernst-
Externí odkaz:
http://arxiv.org/abs/2308.14243
Autor:
Xu, Linqiang, Xu, Lianqiang, Li, Qiuhui, Fang, Shibo, Li, Ying, Guo, Ying, Wang, Aili, Quhe, Ruge, Ang, Yee Sin, Lu, Jing
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of indium phos
Externí odkaz:
http://arxiv.org/abs/2308.14045
We report on the spectral features of the Si IV 1402.77 \AA, C II 1334.53 \AA, and Mg II h or k lines, formed in the layers from the transition region to the chromosphere, in three two-ribbon flares (with X-, M-, and C-class) observed with IRIS. All
Externí odkaz:
http://arxiv.org/abs/2308.11275
Autor:
Liu, Yun-Kai, Cao, Pei-Chao, Qi, Minghong, Huang, Qiang-Kai-Lai, Peng, Yu-Gui, Li, Ying, Zhu, Xue-Feng
The paradigm shift of the Hermitian systems into the non-Hermitian regime profoundly modifies the inherent topological property, leading to various unprecedented effects such as the non-Hermitian skin effect (NHSE). In the past decade, the NHSE effec
Externí odkaz:
http://arxiv.org/abs/2308.08839