Zobrazeno 31 - 40
of 973
pro vyhledávání: '"Kravchenko, S. A."'
Autor:
Shashkin, A. A., Kravchenko, S. V.
This is a chapter for the book "Understanding Quantum Phase Transitions" edited by Lincoln D. Carr (Taylor & Francis, Boca Raton, 2010)
Comment: Final version
Comment: Final version
Externí odkaz:
http://arxiv.org/abs/1002.2629
Publikováno v:
Phys. Rev. B 82, 201308(R) (2010)
We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest acc
Externí odkaz:
http://arxiv.org/abs/0910.5510
Publikováno v:
Ann. Phys. (Berlin) vol. 18, pp. 913-917 (2009)
We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_{1,2} across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a lar
Externí odkaz:
http://arxiv.org/abs/0909.1491
Publikováno v:
Rev. Mod. Phys. 82, 1743 (2010)
We present an overview of the measured transport properties of the two dimensional electron fluids in high mobility semiconductor devices with low electron densities, and of some of the theories that have been proposed to account for them. Many featu
Externí odkaz:
http://arxiv.org/abs/0905.0414
The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of unequal gate
Externí odkaz:
http://arxiv.org/abs/0803.4432
Publikováno v:
Nature Phys. 3, 707 (2007)
The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions, there is n
Externí odkaz:
http://arxiv.org/abs/cond-mat/0609181
Autor:
Kravchenko, S. V., Shashkin, A. A., Anissimova, S., Venkatesan, A., Sakr, M. R., Dolgopolov, V. T., Klapwijk, T. M.
Publikováno v:
Ann. Phys. 321, 1588 (2006)
We measure thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon. Pauli spin susceptibility is observed to grow critically at low electron densities - behavior that is characteristic of the ex
Externí odkaz:
http://arxiv.org/abs/cond-mat/0602526
Publikováno v:
Phys. Rev. B 73, 205324 (2006)
We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau filling fac
Externí odkaz:
http://arxiv.org/abs/cond-mat/0602376
Autor:
Shashkin, A. A., Deviatov, E. V., Dolgopolov, V. T., Kapustin, A. A., Anissimova, S., Venkatesan, A., Kravchenko, S. V., Klapwijk, T. M.
Publikováno v:
Phys. Rev. B 73, 115420 (2006)
In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just before the o
Externí odkaz:
http://arxiv.org/abs/cond-mat/0504301
Autor:
Anissimova, S., Venkatesan, A., Shashkin, A. A., Sakr, M. R., Kravchenko, S. V., Klapwijk, T. M.
Publikováno v:
Phys. Rev. Lett. 96, 046409 (2006)
We measure the thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon in perpendicular magnetic fields. A new, parameter-free method is used to directly determine the spectrum characteristics (
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503123