Zobrazeno 81 - 90
of 464
pro vyhledávání: '"Hisashi Yamada"'
Autor:
Hidenori Takahashi, Hisashi Yamada, Satoshi Katagiri, Takaaki Hayashi, Yujiro Fujino, Hiroshi Tsuneoka, Hidetoshi Kawashima, Tadashi Nakano, Miwako Yoshimoto, Yasuo Noda
Publikováno v:
Documenta Ophthalmologica. 129:49-56
The purpose of this study was to present an atypical case of occult macular dystrophy (OMD) with bilateral chronic subfoveal serous retinal detachment (SRD). A 53-year-old man was ophthalmologically evaluated because of decreased visual acuity in bot
Autor:
Hisashi, Yamada
Publikováno v:
高崎経済大学論集 = THE ECONOMIC JOURNAL OF TAKASAKI CITY UNIVERSITY OF ECONOMICS. 60(4):353-354
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:015001
Autor:
Akio Ohta, Noriharu Takada, Taishi Yamamoto, Katsunori Makihara, Seiichi Miyazaki, Nguyen Xuan Truyen, Tokio Takahashi, Mitsuaki Shimizu, Mitsuhisa Ikeda, Noriyuki Taoka, Hisashi Yamada
Publikováno v:
Japanese Journal of Applied Physics. 58:SIIB22
Photoluminescence properties of SiO2/GaN and Al2O3/GaN structures formed with plasma-enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD) methods were systematically investigated. Intensities related to the band edge (BE) trans
Autor:
Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Tokio Takahashi, Seiichi Miyazaki, Akio Ohta, Noriharu Takada, Taishi Yamamoto, Mitsuaki Shimizu, Hisashi Yamada, Nguyen Xuan Truyen
Publikováno v:
Japanese Journal of Applied Physics. 58:SEEC02
Autor:
Takayoshi Shimura, Takuji Hosoi, Akitaka Yoshigoe, Mitsuaki Shimizu, Takahiro Yamada, Tokio Takahashi, Daiki Terashima, Mikito Nozaki, Heiji Watanabe, Hisashi Yamada
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCD06
Abstarct The impact of controlling Ga-oxide (GaO x ) interlayers in SiO2/GaO x /GaN gate stacks is investigated by means of physical and electrical characterizations. Direct deposition of SiO2 insulators produces thin GaO x interlayers, and subsequen
Autor:
Toru Ujihara, Shoichi Onda, Hisashi Yamada, Junji Ohara, Yosuke Tsunooka, Nobuhiko Kokubo, Shunta Harada, Fumihiro Fujie, Miho Tagawa, Mitsuaki Shimizu
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCB06
Threading dislocations (TDs) in a HVPE-grown c-plane (0001) GaN single crystal were analyzed by micro Raman spectroscopy mapping. The mapping image exhibited the pairs of higher and lower wavenumber regions of peak shift of GaN, which corresponded to
Autor:
Mitsuru Takenaka, Hisashi Yamada, Masafumi Yokoyama, Noboru Fukuhara, Sanghyeon Kim, Noriyuki Taoka, Osamu Ichikawa, Shinichi Takagi, M. Hata, Yuji Urabe, Tetsuji Yasuda, Rui Zhang
Publikováno v:
Solid-State Electronics. 88:2-8
MOSFETs using channel materials with high mobility and low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime. From this viewpoint, attentions have recently been
Autor:
Bolati Kuerban, Nobuto Shibata, Ritsuko Nakayama, Tomoyuki Nagata, Kazuhiko Nakayama, Shunichiro Shinagawa, Hisashi Yamada, Tohru Ohnuma, Heii Arai
Publikováno v:
Dementia and Geriatric Cognitive Disorders EXTRA
Dementia and Geriatric Cognitive Disorders Extra, Vol 3, Iss 1, Pp 272-280 (2013)
Dementia and Geriatric Cognitive Disorders Extra, Vol 3, Iss 1, Pp 272-280 (2013)
Background: Some polymorphisms of the neurotrophin family have previously been investigated as candidate genes for Alzheimer's disease (AD). In the present study, we examined whether neurotrophin-3 (NTF-3) polymorphisms are genetic risk factors in pa
Autor:
Shoichi Onda, Toru Ujihara, Nobuhiko Kokubo, Miho Tagawa, Mitsuaki Shimizu, Yosuke Tsunooka, Junji Ohara, Shunta Harada, Fumihiro Fujie, Hisashi Yamada
Publikováno v:
Applied Physics Express. 11:111001
The threading edge dislocations in a GaN crystal are analyzed via micro-Raman spectroscopy mapping. A clear contrast image of the peak shift from a higher wavenumber to a lower wavenumber is simulated. The direction from the higher-wavenumber region