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pro vyhledávání: '"Dae Ho Kim"'
Autor:
Dae Ho Kim
Publikováno v:
International Journal of u- and e-Service, Science and Technology. 8:13-18
The research infrastructure project for the ICT device industry reliability is aimed to secure and establish the reliability of the ICT device industry, reinforce the competitiveness of domestic ICT device companies and expand their growth power in d
Publikováno v:
Oncotarget
AKT (also known as protein kinase B, PKB) plays an important role in cell survival or tumor progression. For these reasons, AKT is an emerging target for cancer therapeutics. Previously our studies showed that mitochondrial E3 ubiquitin protein ligas
Publikováno v:
Journal of Korea Society of Waste Management. 31:461-468
Autor:
Dae Ho Kim
Publikováno v:
Asia-Pacific Journal of Business Venturing and Entrepreneurship. 9:87-95
Autor:
Seung-Beom Hong, Dae-Ho Kim
Publikováno v:
The Korean Journal of Mycology. 42:69-73
Black molds were occurred on silicon of washbasin in a bathroom in apartment. Blocks of silicon where the fungi grew, were placed on MEA, DG18, DRBC, PDA+PS media, and 18 strains of fungi were isolated. They were identified as Phoma herbarum, Peyrone
Publikováno v:
ICTC
Modern lighting control system is heralding a radical change since the development of LED lighting and the universalization of Internet. An advanced lighting system is started to be controlled anywhere anytime without being constrained in time and sp
Autor:
Dae Ho Kim
Publikováno v:
Asia-Pacific Journal of Business Venturing and Entrepreneurship. 8:57-66
Publikováno v:
Journal of Microbiology, 51, 766-772. Microbiological Society of Korea
Strains of the Aspergillus flavus/oryzae complex are frequently isolated from meju, a fermented soybean product, that is used as the starting material for ganjang (soy sauce) and doenjang (soybean paste) production. In this study, we examined the afl
Autor:
Jin Min Kim, Dae Ho Kim
Publikováno v:
Journal of the Korean Physical Society. 63:2067-2071
A discrete growth model with quenched impurities driven by an external force is studied on a Sierpinski gasket substrate. At the critical force F c , the growth velocity v of the average interface height follows a power-law behavior v(t) ∼ t −δ
Publikováno v:
Mycobiology. Jun2013, Vol. 41 Issue 2, p100-107. 8p. 1 Black and White Photograph, 2 Charts.