Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Horst Zimmermann"'
Publikováno v:
IEEE Sensors Journal. 21:7572-7580
Single-photon avalanche diodes (SPADs) are very attractive devices in optical detector applications where both CMOS integration and low light detection are critical. An important SPAD performance parameter is the photon detection probability (PDP) wh
Publikováno v:
IEEE Solid-State Circuits Letters. 1:62-65
In this letter, we present a fully integrated single-photon avalanche diode (SPAD) using a fast cascoded quenching circuit (QC) fabricated in a 0.35- ${\mu }\text{m}$ CMOS process. The QC features a fast active quenching time of only 0.48 ns and an a
Autor:
Bernhard Steindl, Michael Hofbauer, Horst Zimmermann, Hiwa Mahmoudi, Seyed Saman Kohneh Poushi
Publikováno v:
Applied Optics. 60:7815
This work presents a simulation and experimental study of the photon detection probability (PDP) enhancement in CMOS single-photon avalanche diodes (SPADs) using an anti-reflection coating (ARC) above the sensitive area. It is shown how the ARC layer
Autor:
Martin Sagmeister, Rainer Hainberger, Gerald Meinhardt, Moritz Eggeling, J. Edlinger, Paul Muellner, Alejandro Maese-Novo, Wolfgang Drexler, M. Vlaskovic, Dana Seyringer, Jochen Kraft, Horst Zimmermann, Elisabet Rank, Günther Koppitsch
Publikováno v:
ICTON
We present the design, simulation, and technological verification of a compact 256-channel, 42-GHz silicon nitride based AWG-spectrometer dedicated to the realization of an on-chip spectral domain optical coherence tomography (SD-OCT) system. The spe
Autor:
Jochen Kraft, Günther Koppitsch, Paul Muellner, Alejandro Maese-Novo, Horst Zimmermann, M. Vlaskovic, Dana Seyringer, C. Burtscher, Wolfgang Drexler, Rainer Hainberger, J. Edlinger, Gerald Meinhardt, Elisabet Rank, Martin Sagmeister
Publikováno v:
Nanoengineering: Fabrication, Properties, Optics, and Devices XV.
In this paper we present the size reduction of a 160-channel, 50-GHz Si3N4 based AWG-spectrometer. The spectrometer was designed for TM-polarized light with a central wavelength of 850 nm applying our proprietary “AWG-Parameters” tool. For the si
Publikováno v:
Solid-State Electronics. :211-218
In this paper we present several different types of fully integrated pnp phototransistors realized in a 0.6 μm OPTO ASIC CMOS process using low doped epitaxial starting wafers. Different types of phototransistors were realized by varying base doping
Autor:
Gerald Meinhardt, Kerstin Schneider-Hornstein, Horst Zimmermann, Ingrid Jonak-Auer, Ewald Wachmann, A. Marchlewski
Publikováno v:
Procedia Engineering. 5:645-648
A new CMOS-based p+np−p+ phototransistor utilizing a modulated base doping is presented. Furthermore, the collector of the device is formed by a thick low-doped p− region. Both measures lead to excellent responsivity values of 12.2, 46.5, 46.9 an
Publikováno v:
IEEE Sensors Journal. 6:385-390
We propose a PIN photodiode integrated in a BiCMOS process which combines a quantum efficiency of nearly 100% for red light, fast response times, and a low junction capacitance. Bandwidths of 720 MHz at 660 nm and 683 MHz at 850 nm are achieved for t
Publikováno v:
IEEE Sensors Journal. 5:970-975
The bandwidth of the photodiode in an optoelectronic integrated sensor circuit with a single 5-V supply is increased from 20 to 770 MHz by an on-chip voltage up-converter. A shunt-regulator is implemented to keep the die area small and to best exploi
Autor:
B. Muller, Horst Zimmermann
Publikováno v:
IEEE Transactions on Nuclear Science. 49:2032-2036
Results of a large-area ultralow-capacitance lateral p-i-n photodiode in a thin crystalline silicon (c-Si) film are presented. Silicon-on-insulator wafers are used for manufacturing of this photodiode. The ultralow-capacitance photodiode possesses an