Zobrazeno 1 - 5
of 5
pro vyhledávání: '"V. Dragoi"'
Publikováno v:
SPIE Proceedings.
Various MEMS devices are incorporated into consumer electronic devices. A particular category of MEMS require vacuum packaging by wafer bonding with the need to encapsulate vacuum levels of 10-2 mbar or higher with long time stability. The vacuum req
Publikováno v:
2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration.
The bonding behavior of a low temperature direct wafer bonding process was studied for Si wafers with native oxide and Si wafers with thermal oxide. It was found that high bond strength could be achieved without annealing already at RT. Silicon bulk
Publikováno v:
2005 7th Electronic Packaging Technology Conference.
As standard wafer bonding processes require typically a high temperature annealing step, this limits the use of wafer bonding. Due to the need to expand the applications field, low temperature (
Wafer-scale BCB Resist-Processing Technologies for High Density Integration and Electronic Packaging
Publikováno v:
2005 International Symposium on Electronics Materials and Packaging.
IC performance is drastically limited by line-to-line capacity coupling and RC interconnect delay times resulted from the continuous increase in integration densities with 0.10/spl mu/m line and space width approaches, as well from increased signal f
Publikováno v:
2004 IEEE International Conference on Semiconductor Electronics.
The different fields and especially its various applications for microelectromechanical systems (MEMS) prevent the use of uniform packaging techniques for all types of /spl mu/-device. Several bonding techniques performed at wafer-scale, with the adv