Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Zh. I. Alferov"'
Autor:
Nikolai A. Maleev, P. S. Kopjev, Zh. I. Alferov, I. A. Zamoryanskaya, V. T. Punin, V. M. Ustinov, S. G. Konnikov, M. A. Yagovkina, R. I. Ilkaev, Pavel N. Brunkov, A. A. Gutkin, A. V. Bobyl, Yu. G. Musikhin, D. A. Sakseev
Publikováno v:
Semiconductors. 40:687-690
The influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs transistor heterostructures has been studied by means of X-ray diffraction analysis and transmission electron microscopy. It was found that irradiation with doses exceeding ∼3 × 107
Autor:
A. E. Zhukov, Wolfgang Neumann, Zh. I. Alferov, Yu. G. Musikhin, B. V. Volovik, D. S. Sizov, Nikolai N. Ledentsov, Vitaly Shchukin, Dieter Bimberg, R. Heitz, Mikhail V. Maximov, A. F. Tsatsul’nikov, A. R. Kovsh, I.N. Kaiander, S. S. Mikhrin, Victor M. Ustinov, Yu. M. Shernyakov
Publikováno v:
Physical Review B. 62:16671-16680
Strain-driven decomposition of an alloy layer is investigated as a means to control the structural and electronic properties of self-organized quantum dots. Coherent InAs/GaAs islands overgrown with an InGa(Al)As alloy layer serve as a model system.
Autor:
Dagmar Gerthsen, A. E. Zhukov, E. Schomburg, S. Brandl, A. Yu. Egorov, Karl Friedrich Renk, B. V. Volovik, Zh. I. Alferov, R.N Kyutt, N. N. Ledentsov, Dimitri Litvinov, A. R. Kovsh, Yu. Koschurinov, P. S. Kop’ev, D.G. Pavel'ev, Andreas Rosenauer, V. M. Ustinov
Publikováno v:
Physics Letters A. 262:396-401
We report on the observation of miniband transport in a GaAs/AlAs superlattice with submonolayer AlAs barriers. An X-ray analysis indicated the superlattice periodicity, and a composition analysis by a high-resolution transmission electron microscopy
Autor:
N. N. Ledentsov, J. Böhrer, A. E. Zhukov, Jürgen Christen, Marius Grundmann, Zh. I. Alferov, Ulrich Gösele, A. Yu. Egorov, Peter Werner, J. Heydenreich, U. Richter, Victor M. Ustinov, P. S. Kop’ev, S. S. Ruvimov, Dieter Bimberg
Publikováno v:
Physical Review Letters. 74:4043-4046
We report ultranarrow $(l0.15\mathrm{meV})$ cathodoluminescence lines originating from single InAs quantum dots in a GaAs matrix for temperatures up to 50 K, directly proving their $\ensuremath{\delta}$-function-like density of electronic states. The
Autor:
A. E. Zhukov, A. Yu. Egorov, R. Heitz, Marius Grundmann, Peter Werner, Jürgen Christen, Dieter Bimberg, Nikolai N. Ledentsov, Zh. I. Alferov, Victor M. Ustinov, S. S. Ruvimov, P. S. Kop’ev, L. Eckey, J. Heydenreich, J. Böhrer, U. Richter
Publikováno v:
physica status solidi (b). 188:249-258
Nanometer-scale quantum dots are fabricated using the Stranski-Krastanov growth mode of InAs on GaAs(001). For an average coverage of four monolayers, 10 11 cm -2 pyramidal-shaped dots (12±1 nm base along , 5±1 nm high) are formed as observed in pl
Autor:
Yu. G. Musikhin, W. V. Lundin, Dagmar Gerthsen, A. V. Sakharov, N. N. Ledentsov, A. F. Tsatsul’nikov, Zh. I. Alferov, Alexander Usikov, Igor Krestnikov, D. A. Bedarev, Axel Hoffmann, Dieter Bimberg, N. A. Bert
Publikováno v:
Applied Physics Letters. 80:2099-2101
The influence of different growth conditions on the In distribution in ultrathin InGaN insertions in a GaN matrix is investigated by high-resolution transmission electron microscopy and an appropriate image evaluation technique. It is demonstrated th
Autor:
V. M. Ustinov, G. E. Cirlin, Peter Werner, B. V. Volovik, U. Gösele, Zh. I. Alferov, V A Egorov, N. K. Polyakov, N. N. Ledentsov, R. Heitz, V. N. Petrov, Dieter Bimberg, N. D. Zakharov
Publikováno v:
Applied Physics Letters. 76:2677-2679
Epitaxial Si/InAs/Si heterostructure grown on (001) Si substrate by molecular beam epitaxy and annealed at 800 °C was investigated by high resolution transmission electron microscopy. Extensive interdiffusion leads to the formation of an InAs solid
Autor:
V.M. Ustinov, Dieter Bimberg, Nikolai Ledentsov, Zuzanna Liliental-Weber, P. S. Kop’ev, Zh. I. Alferov, S. S. Ruvimov, Jack Washburn, Vitaly Shchukin
Publikováno v:
Physics of the Solid State. 40:781-783
Self-organized nano-objects fabricated in different semiconductor systems are currently at the focus of scientific interest because of their unique electronic properties. Transmission electron microscopy and high-resolution electron microscopy have b
Autor:
A. E. Zhukov, Peter Werner, A. O. Kosogov, Dieter Bimberg, Victor M. Ustinov, Zh. I. Alferov, A. Yu. Egorov, P. S. Kop’ev, N. A. Bert, Ulrich Gösele, Nikolai N. Ledentsov
Publikováno v:
Applied Physics Letters. 69:3072-3074
Annealing at higher temperature (700 °C) of structures with two‐dimensional and three‐dimensional arrays in InAs–GaAs quantum dots (QDs) results in an increase in the size and in a corresponding decrease in the indium composition of the QDs. T
Autor:
Nikolay Cherkashin, V. M. Ustinov, N. V. Lukovskaya, Yu. G. Musikhin, A. G. Makarov, N. A. Bert, N. N. Ledentsov, V. A. Shchukin, M. V. Maksimov, G. E. Cirlin, Dieter Bimberg, Zh. I. Alferov
Publikováno v:
Semiconductors
Semiconductors, 2003, 37 (7), pp.861--865. ⟨10.1134/1.1592865⟩
Semiconductors, 2003, 37 (7), pp.861--865. ⟨10.1134/1.1592865⟩
International audience; The effect of the growth temperature on the density, lateral size, and height of InAs-GaAs quantum dots (QD) has been studied by transmission electron microscopy. With the growth temperature increasing from 450 to 520°C, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4da773b8b1d97b0433f8a3820f4d8ff4
https://hal.science/hal-01736113
https://hal.science/hal-01736113