Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Paolo Visconti"'
Autor:
Paolo Visconti, L. He, Hadis Morkoç, Daming Huang, Jacek B. Jasinski, Michael A. Reshchikov, Zuzanna Liliental-Weber
Publikováno v:
Physica B: Condensed Matter. :440-443
We studied optical manifestation of structural defects in unintentionally doped GaN. A series of sharp peaks (labeled as Y i with i =1,2,…,11) was observed in the low-temperature photoluminescence spectrum in the photon energy range between 2.6 and
Autor:
Z. Liliental-Weber, Paolo Visconti, Feng Yun, T. King, Jacek B. Jasinski, C. W. Litton, Hadis Morkoç, A. A. Baski, Daming Huang, Michael A. Reshchikov
Publikováno v:
physica status solidi (b). 228:543-547
Wurtzitic GaN epilayers having both Ga and N-polarity were grown by reactive molecular beam epitaxy (MBE) using a plasma-activated nitrogen source on c-plane sapphire. The polarities were verified by convergent beam electron diffraction (CBED). High-
Autor:
Paolo Visconti, Daming Huang, A. A. Baski, Feng Yun, T. King, Zuzanna Liliental-Weber, Cole W. Litton, Michael A. Reshchikov, Jacek B. Jasinski, R. Cingolani, Hadis Morkoç
Publikováno v:
physica status solidi (b). 228:513-517
Availability of reliable and quick methods to investigate defects and polarity in GaN films is of great interest. We have used photo-electrochemical (PEC) and hot wet etching to determine the defect density. We found the density of whiskers formed by
Autor:
Jacek B. Jasinski, W. Swider, Paolo Visconti, R. Cingolani, Michael A. Reshchikov, David C.S. Huang, David J. Smith, Hadis Morkoç, Feng Yun, Zuzanna Liliental-Weber
Publikováno v:
Visconti, P.; Huang, D.; Reshchikov, M.A.; Yun, F.; Cingolani, R.; Smith, D.J.; et al.(2002). Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques. Lawrence Berkeley National Laboratory. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/11w700dw
The availability of reliable and quick methods to determine defect density and polarity in GaN films is of great interest. We have used photo-electrochemical (PEC) and hot wet etching using H{sub 3}PO{sub 4} and molten KOH to estimate the defect dens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39d42f0679af3095a2e81231a7a00440
http://www.escholarship.org/uc/item/11w700dw
http://www.escholarship.org/uc/item/11w700dw
Autor:
David C.S. Huang, A. A. Baski, Paolo Visconti, Feng Yun, Hadis Morkoç, Cole W. Litton, T. King, Zuzanna Liliental-Weber, Michael A. Reshchikov, Jacek B. Jasinski
We report the surface, structural, and optical properties of typical Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy. The Ga-polar films were grown on AlN buffer while the N-polar films were grown on GaN buffer layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a17ef8b877246f076ffb633b415b0d30
https://hdl.handle.net/11587/107351
https://hdl.handle.net/11587/107351
Autor:
Hadis Morkoç, W. Swider, K. Y. Lee, Zuzanna Liliental-Weber, Paolo Visconti, Michael A. Reshchikov, Feng Yun, Jacek B. Jasinski, Soon-oh Park, K. M. Jones
A free-standing GaN template grown by hydride vapor phase epitaxy has been characterized by transmission electron microscopy ~TEM!. The TEM investigation was augmented by x-ray diffraction, defect delineation etching process followed by imaging with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3df2ecc3eed2aca4a0aee19bf1159c8
https://hdl.handle.net/11587/107338
https://hdl.handle.net/11587/107338
Autor:
David J. Smith, K. M. Jones, Paolo Visconti, Richard J. Molnar, Michael A. Reshchikov, Hadis Morkoç, R. Cingolani
Publikováno v:
MRS Proceedings. 680
The availability of reliable and quick methods to investigate defects in GaN films is of great interest. Photo-electrochemical (PEC), and hot wet etching using both H3PO4 acid and molten KOH have been used to study structural defects in GaN layers gr
Autor:
Jacek B. Jasinski, W. Swider, Paolo Visconti, K. Y. Lee, K. M. Jones, Hadis Morkoç, Zuzanna Liliental-Weber, Michael A. Reshchikov, Feng Yun, Sang-Yong Park, R. Cingolani
Publikováno v:
Scopus-Elsevier
Structural, electrical and optical properties of free-standing 200-μm thick GaN films grown by hydride vapor phase epitaxy (HVPE) have been investigated. After laser lift-off, the GaN substrates were mechanically polished on both Ga and N-sides and
Autor:
Paolo Visconti, Z. Liliental-Weber, T. King, Jacek B. Jasinski, Hadis Morkoç, Michael A. Reshchikov, Daming Huang, Feng Yun
Publikováno v:
MRS Proceedings. 693
We compared photoluminescence (PL) and cross-sectional transmission electron microscopy (TEM) characteristics of GaN samples with Ga and N polarities grown by molecular beam epitaxy (MBE) on sapphire substrates. Ga-polar films grown at low temperatur
Autor:
Jacek B. Jasinski, Paolo Visconti, Daming Huang, R. Cingolani, Michael A. Reshchikov, Feng Yun, T. King, Hadis Morkoç, Zuzanna Liliental-Weber
Publikováno v:
ResearcherID
Availability of reliable and quick methods to investigate extended defects and polarity in GaN films are of great interest to researchers investigating and exploiting GaN-based structures. The step immediately following the determination of defect de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc0a6c6d1eb388c13453408035fce143
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000174883400003&KeyUID=WOS:000174883400003
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000174883400003&KeyUID=WOS:000174883400003