Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Tadahiro Ohmi, Yuki Kumagai, Tomoyuki Suwa, Rihito Kuroda, T. Inatsuka, Akinobu Teramoto, Shigetoshi Sugawa
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 26:288-295
We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precisio
Publikováno v:
Fluctuation and Noise Letters. 10:431-445
On account of low resistivity contacts and of a newly developed device, the investigation of the 1/f noise at high drain current has been made possible. Therefore, it has been acknowledged that the correlated carrier number and mobility fluctuations
Autor:
Y. Kumagai, Tadahiro Ohmi, S. Sugawa, Rihito Kuroda, Akinobu Teramoto, T. Inatsuka, Tomoyuki Suwa
Publikováno v:
IEEE Transactions on Electron Devices. 58:3307-3313
Using the array test pattern, gate current through the tunnel oxide on the order of 10-16 A can be measured for about 1 000 000 transistors within 4 min. Because this test pattern can be fabricated by simple processes and its peripheral circuits are
Publikováno v:
Journal of the Korean Physical Society. 59:391-401
Current silicon technologies are now facing very severe limitations such as no more progress on the speed performance of microprocessors from Intel at around a 3-GHz clock rate, for 5 years. Current silicon technologies can fabricate large scale inte
Publikováno v:
IEEE Transactions on Electron Devices. 57:1597-1607
A study of the impact of the channel direction over the effective mobility and the 1/f noise in MOSFETs fabricated on (100) and (110) silicon-oriented wafers finding its outcome in the fabrication of future nonplanar device structures has been done.
Publikováno v:
Solid-State Electronics. 54:420-426
The paper deals with the investigation of the hole mobility in p-channel MOS transistors fabricated on (1 1 0) oriented silicon wafers. At first, we showed that the conventional methods used to extract the conduction parameters such as the low field
Publikováno v:
ECS Transactions. 16:7-12
The mobility in MOSFETs is one of the most important parameter and the need to model it into an efficient and user-friendly model has been a necessity. The most common and widely used way is to define two parameters, the low field mobility μ0 and th
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 22:126-133
In this work, a new electrical characterization method for MOSFETs using an in-wafer Kelvin-contact device structure is developed. The developed method can eliminate the parasitic series resistance such as resistance in source/drain terminals of MOSF
Autor:
Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Ichirou Takahashi, Tadahiro Ohmi, Yasuyuki Shirai
Publikováno v:
Ferroelectrics. 368:90-95
We have formed ferroelectric Sr 2 (Ta 1 − x ,Nb x ) 2 O 7 (STN) film by using our developed 13.56 and 100 MHz coupled mode rf-sputtering system. For forming ferroelectric STN [perovskite Sr 2 (Ta 1 − x ,Nb x ) 2 O 7 phase], Ta and Nb are oxidized
Publikováno v:
Japanese Journal of Applied Physics. 47:2668-2671
This work demonstrates the performance comparison of ultrathin fully depleted (FD) silicon on insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) with various structures. The current drivability and immunity to the short