Zobrazeno 41 - 50
of 65
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.
This paper presents RAM technology that quantizes analog input data and stores it as multi-valued data for intelligent data processing. Moreover, data association and classification according to the degree of association can also be performed at the
Autor:
Tadahiro Ohmi, Tadashi Shibata
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
A novel functional MOS transistor which behaves much more intelligently than a mere switching device has been developed. The device has a floating gate whose potential is controlled by a plural number of input gates via capacitive coupling. The trans
Autor:
Tadashi Shibata, Tadahiro Ohmi
Publikováno v:
Proceedings of International Conference on Microelectronics.
We will propose the concept of a “four-terminal device” which functionally surpasses three-terminal devices like MOSFET's and bipolar transistors in the ability of controlling the current flowing through a device. The enhanced functionality at th
Publikováno v:
ISCAS (1)
We have developed a non-volatile high-precision analog EEPROM comprising two transistors per cell. In this newly developed memory, real-time write monitoring (RTM) is employed during cell programming to achieve automatic write termination without con
Autor:
Tadahiro Ohmi, Shigetoshi Sugawa, Rihito Kuroda, Akinobu Teramoto, A. Yonezawa, Toshiki Obara
Publikováno v:
Japanese Journal of Applied Physics. 53:04EC19
The random telegraph noise (RTN) characteristics in numerous metal–oxide–semiconductor field-effect transistors were evaluated accurately with small floor noise of 59 µV. Because of the small floor noise RTN characteristics with small amplitudes
Publikováno v:
Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials.
Publikováno v:
Japanese Journal of Applied Physics. 52:050203
The use of heavier noble gases such as Xe instead of the lighter Ar during the magnetron sputtering deposition of amorphous indium–gallium–zinc oxide films is introduced to the fabrication of their thin-film transistors. Higher mobility in the Xe
Autor:
Hiroshi Kambayashi, Akinobu Teramoto, Kazuhide Hasebe, Hirokazu Ueda, Yuichiro Morozumi, Takehiko Nomura, Tadahiro Ohmi, Katsushige Harada, Shigetoshi Sugawa
Publikováno v:
Japanese Journal of Applied Physics. 52:04CF09
High quality SiO2/Al2O3 gate stack has been demonstrated for GaN metal–oxide–semiconductor (MOS) transistor. We confirmed that Al2O3 could realize a low interface-state density between Al2O3 and GaN, however, the breakdown field was low. By incor
Autor:
Shigetoshi Sugawa, Takehiko Nomura, Hiroshi Kambayashi, Akinobu Teramoto, Hirokazu Ueda, Sadahiro Kato, Tadahiro Ohmi
Publikováno v:
Japanese Journal of Applied Physics. 51:04DF03
High quality SiO2 gate insulator has been demonstrated for GaN metal–oxide–semiconductor (MOS) transistor which has high performance with normally-off operation. The SiO2 films formed on GaN by microwave-excited plasma enhanced chemical vapor dep
Publikováno v:
Japanese Journal of Applied Physics. 51:04DC07
The paper deals with the investigation of the mobility in accumulation mode p-channel metal–oxide–semiconductor field-effect transistors (p-MOSFETs). The mobility extracted following the conventional methodology used for the inversion mode p-MOSF