Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Kristel Fobelets"'
Autor:
Enrique Diez, Juan A. Delgado-Notario, Yahya Moubarak Meziani, Kristel Fobelets, Elham Javadi, Jaime Calvo-Gallego, Jesus E. Velázquez-Pérez
Publikováno v:
physica status solidi (a). 215:1700475
Plasma waves in gated 2-D systems can be used to detect THz electromagnetic radiation. This work reports on a two-dimensional hydrodynamic-model (HDM) applied to investigate the sub-THz photovoltaic response of Schottky-gated strained-Si MODFETs. TCA
Publikováno v:
IEEE Transactions on Electron Devices. 52:2067-2074
N-type Schottky-gated Si:SiGe heterostructure field-effect transistors with physical gate lengths between 70 and 450nm are characterized over a wide temperature range (T=10 K...300 K) for low electric fields. The room-temperature maximum low-field tr
Publikováno v:
Semiconductor Science and Technology. 19:L95-L98
An investigation of dynamic-threshold (DT) performance was carried out on a 0.5 µm gate length p-type Si:SiGe heterostructure field effect transistor, for temperatures ranging from T = 300 K to T = 10 K. The maximum low-field transconductance of DT-
Autor:
W. Jeamsaksiri, V. Gaspari, C. Papavasilliou, J.E. Velazquez-Perez, U. Konig, Kristel Fobelets, Thomas Hackbarth, T. Vilches, K. Michelakis
Publikováno v:
Solid-State Electronics. 48:1401-1406
The measured performance of sub-micron Si:SiGe Schottky gated HFETs is compared to Si nMOSFETs. To allow an up-to-date comparison between Si and strained-Si FETs, the different device types have been studied in their respective technologies. RF perfo
Autor:
U. Konig, A. Vilches, D.G. Haigh, K. Michelakis, Christos Papavassiliou, Kristel Fobelets, T Hackbath
Publikováno v:
Solid-State Electronics. 48:1423-1431
In this paper, intrinsic device parameters, directly extracted from buried-channel n-HMODFET devices biased at micropower supply levels are presented. Sub-threshold region peaks in plots of intrinsic transit frequency and transconductance vs. bias cl
Autor:
Kristel Fobelets, A. Vilches, D.G. Haigh, Rodney Loga, K. Michelakis, Christos A. Papavasiliou
Publikováno v:
R34
R19
R19
A detailed introduction to published analogue circuit design techniques using Si and Si/SiGe FET devices for very low-power applications is presented in this review. The topics discussed include sub-threshold operation in FET devices, micro-current m
Autor:
Chris Toumazou, Jing Zhang, S. Despotopoulos, Christos Papavassiliou, A. Vilches, V. Gaspari, Kristel Fobelets, K. Michelakis
Publikováno v:
Applied Surface Science. 224:386-389
Silicon-germanium (SiGe) heterojunction metal-oxide-semiconductor field-effect transistors (SiGe HMOSFETs) have been successfully fabricated on Si substrate. The semiconductor heterostructure, which was grown by gas-source molecular beam epitaxy (GS-
Publikováno v:
Solid-State Electronics. 47:1289-1295
The performance of surface channel MOSFET devices is dependent on the Si/SiO 2 interface roughness. This paper examines the performance demonstrated by strained Si/SiGe heterojunction n-channel MOSFET devices (HNMOSFETs) fabricated on ultra-low press
Autor:
Gustaaf Borghs, Kristel Fobelets
Publikováno v:
Semiconductor Science and Technology. 13:318-321
We have investigated the influence of the thickness of an undoped spacer layer under the channel on the current-voltage characteristics of GaAs MESFETs. To that purpose we have grown the active layers of the MESFETs on top of a 50 nm AlAs layer to se
Autor:
J.E. Velazquez-Perez, P.W. Ding, Anthony O'Neill, Jing Zhang, V. Gaspari, Kristel Fobelets, Sarah H. Olsen
Publikováno v:
IEEE Electron Device Letters. 25:334-336
The dynamic threshold (DT) behavior of strained-Si (s-Si) n-type surface channel MOSFETs has been investigated for operating temperatures ranging from 10 to 300 K. The temperature dependence of the coefficients governing the body effect is presented,