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pro vyhledávání: '"Abdelaziz El Moussaouy"'
Autor:
Jaime Calvo-Gallego, Juan A. Delgado-Notario, Jesús E. Velázquez-Pérez, Miguel Ferrando-Bataller, Kristel Fobelets, Abdelaziz El Moussaouy, Yahya M. Meziani
Publikováno v:
Sensors, Vol 21, Iss 3, p 688 (2021)
This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30
Externí odkaz:
https://doaj.org/article/3ff8ee18cdef4a04a92b1c0100665ef9