Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Felix Carrascoso"'
Publikováno v:
Nano Materials Science, Vol 4, Iss 1, Pp 44-51 (2022)
Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of two-dimensional semiconductors like molybdenum disulfide (MoS2). Although several theoretical works predicted that biaxial strain would be more eff
Externí odkaz:
https://doaj.org/article/3d91d0f15f334f17bd733064aaab5167
Autor:
Felix Carrascoso, Gabriel Sánchez-Santolino, Chun-wei Hsu, Norbert M. Nemes, Almudena Torres-Pardo, Patricia Gant, Federico J. Mompeán, Kourosh Kalantar-zadeh, José A. Alonso, Mar García-Hernández, Riccardo Frisenda, Andres Castellanos-Gomez
Publikováno v:
Materials, Vol 13, Iss 10, p 2293 (2020)
We fabricated large-area atomically thin MoS2 layers through the direct transformation of crystalline molybdenum trioxide (MoO3) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10–20 nm single-crystal
Externí odkaz:
https://doaj.org/article/0a259e49c0cd48a9ae9b3ca21f218f20
Autor:
Hao Li, Tayfun Kutlu, Félix Carrascoso, Hasan Sahin, Carmen Munuera, Andrés Castellanos Gómez
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 36, Pp n/a-n/a (2023)
Abstract Strain engineering is a powerful strategy for tuning the optical, electrical, vibrational properties of 2D nanomaterials. In this work, a four‐point bending apparatus is constructed to apply both compressive and tensile strain on 2D anisot
Externí odkaz:
https://doaj.org/article/c5c3a0501f014d73b1578422069d3abc