Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yuuichi Takeuchi"'
Publikováno v:
Materials Science Forum. 897:43-46
In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperatu
Autor:
Akiba Atsuya, Hiroaki Fujibayashi, Masami Naito, Tomomi Kozu, Kazukuni Hara, Yuuichi Takeuchi, Olga Milikofu
Publikováno v:
Materials Science Forum. :339-342
In this report we were able to successfully identify and localize in 3D 3C and 6H foreign polytypes and stress in the embedded epilayer by high resolution 3D Raman spectroscopy, that were otherwise invisible under the microscope or SEM, in non-contac