Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yuuichi Takeuchi"'
Publikováno v:
Silicon Carbide: Power Devices and Sensors, Volume 2
This paper reviews the normally-off (N- off) and normally-on (N- on) SiC junction field effect transistor (JFET) concepts and presents an innovative all-epitaxial double-gate trench JFET (DGTJFET) structure. The DGTJFET design combines the advantages
Autor:
A. Mihaila, Rajesh Kumar Malhan, S.J. Rashid, Florin Udrea, Yuuichi Takeuchi, Mitsuhiro Kataoka
Publikováno v:
Microelectronic Engineering. 83:176-180
The significant progress made over the past few years placed Silicon Carbide (SiC) power devices in a position to competitively challenge the existing standard Si solutions. This paper reviews the current trends regarding SiC junction-controlled devi
Autor:
Mitsuhiro Kataoka, Rajesh Kumar Malhan, Florin Udrea, Andrei Mihaila, Gehan A. J. Amaratunga, S.J. Rashid, Yuuichi Takeuchi
Publikováno v:
Microelectronic Engineering. 83:107-111
A double gate normally-off silicon carbide (SiC) trench junction field effect transistors (JFET) design is considered. Innovative migration enhanced embedded epitaxial (ME^3) growth process was developed to replace the implantation process and realiz