Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Wan, Bing"'
Autor:
傅广生 Fu Guang-sheng, 于威 Yu Wei, 路万兵 Lu Wan-bing, 徐艳梅 Xu Yan-mei, 徐焕钦 Xu Huan-qin, 王新占 Wang Xing-zhan
Publikováno v:
Chinese Journal of Luminescence. 32:347-352
The silicon nanoparticle have been grown by radio-frequency plasmas-enhanced chemical vapor deposition technique and the photoluminescence(PL)of the silicon suspension have been studied by both steady-state and time-resolved photoluminescence spectra
Autor:
Kai Fan, Meng Chen, Ning Li, Wan-Bing Yi, Zhongshan Zheng, Zhongli Liu, Guo-Qiang Zhang, Xi Wang, Enxia Zhang
Publikováno v:
Chinese Physics. 14:565-570
The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI P
Publikováno v:
Chinese Physics Letters. 21:1600-1603
Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P
Publikováno v:
Chinese Physics Letters. 21:149-152
Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen
Publikováno v:
Acta Physica Sinica. 55:1936
The correlation between the hydrogen bonding configurations and the energy band structures of hydrogenated nanocrystalline (NC) silicon films has been investiga ted. The samples were prepared by helicon wave plasma chemical vapor deposition technique
Autor:
Liu Zhongli, YI Wan-Bing, Zheng Zhong-Shan, Fan Kai, Zhang Guoqiang, Chen Meng, Wang Xi, Li Ning, Zhang En-xia
Publikováno v:
Acta Physica Sinica. 54:348
The effects, caused by the process of the implantation of nitrogen in the buried oxide layer of SIMOX wafer, on the characteristics of partially depleted silicon_on_insulator nMOSFET have been studied. The experimental results show that the channel e
Publikováno v:
Acta Physica Sinica. 54:2394
Optical emission spectroscopy (OES) is used to diagnose the active species emission in the helicon_wave_plasma_enhanced chemical vapor deposition of nanocrystalline silicon. The effects of the experimental parameters on OES intensity of SiH *, Hβ an
Publikováno v:
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics; 7/10/2005, Vol. 19 Issue 15-17, p2704-2709, 6p