Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Kristel Fobelets"'
Autor:
Jaime Calvo-Gallego, Juan A. Delgado-Notario, Jesús E. Velázquez-Pérez, Miguel Ferrando-Bataller, Kristel Fobelets, Abdelaziz El Moussaouy, Yahya M. Meziani
Publikováno v:
Sensors, Vol 21, Iss 3, p 688 (2021)
This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30
Externí odkaz:
https://doaj.org/article/3ff8ee18cdef4a04a92b1c0100665ef9
Autor:
Juan A. Delgado-Notario, Jaime Calvo-Gallego, Jesús E. Velázquez-Pérez, Miguel Ferrando-Bataller, Kristel Fobelets, Yahya M. Meziani
Publikováno v:
Applied Sciences, Vol 10, Iss 17, p 5959 (2020)
Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub
Externí odkaz:
https://doaj.org/article/413ada0e09f747eebb002692633cba55
Publikováno v:
IEEE Sensors Journal. 21:14609-14618
Reduction of drift in Complementary Metal Oxide-Semiconductor (CMOS) Ion-Sensitive Field-Effect Transistor (ISFET) pH sensors is demonstrated using monolayer and multilayer graphene sheets. Graphene blocks the ion penetration in the CMOS passivation
Publikováno v:
IEEE Transactions on Nanotechnology. 17:154-160
When metal-assisted chemical etching (MACE) is used to increase the effective surface area of Si electrodes for electrochemical capacitors, it is often found that the cyclic voltammetry characteristics contain anodic and cathodic peaks. We link these
Publikováno v:
IEEE Transactions on Nanotechnology. 11:661-665
The influence of polymer layers wrapped around n-type Si nanowires (NW) on their electrical characteristics is investigated. The NWs are fabricated via metal induced excessive oxidation and dissolution of Si, and have a diameter of ~350 nm. Single wi
Publikováno v:
IEEE Electron Device Letters. 35:596-598
To improve the output power of n-and p-type Si nanowire array (NWA)/bulk thermoelectric power generators (TEGs) fabricated using metal assisted chemical etching, post-nanowire-etch spin-on-doping (SOD), and arrays on both sides of the bulk are used.
Subthreshold Operation of a Monolithically Integrated Strained-Si Current Mirror at Low Temperatures
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 53:1215-1219
The dc operation of a simple current mirror built with two monolithically integrated strained-Si (s-Si) MOSFETs operating in the subthreshold region is studied as a function of temperature. At room temperature, the log-log current relationship is lin
Publikováno v:
Nanotechnology. 25(48)
We use a metal assisted chemical etch process to fabricate silicon nanowire arrays (SiNWAs) onto a dense periodic array of pyramids that are formed using an alkaline etch masked with an oxide layer. The hybrid micro-nano structure acts as an anti-ref
Autor:
K. Michelakis, S. Despotopoulos, A. Vilches, Kristel Fobelets, Christos Papavassiliou, Chris Toumazou
Publikováno v:
Solid-State Electronics. 49:591-594
The authors present the first to their knowledge monolithic inverting current mirror fabricated on heterostructure Si/SiGe technology, using buried silicon channel depletion-mode MOSFET transistors. Characterisation results both at DC and at high fre
Publikováno v:
IEEE Electron Device Letters. 31:860-862
Silicon nanowires, prepared by electroless chemical etching, are used to fabricate dual-gate field-effect transistors. The diameters of the nanowires vary from 40–300 nm, with a maximum aspect ratio of ˜3000. Titanium silicide contacts are fabrica