Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Hyejin Jeon"'
Autor:
Sin-Hyung Lee, Kyung-Ku Kang, H. Park, Dong-Hoon Lee, Kun-Sik Park, Hyejin Jeon, Min-Kyung Lee
Publikováno v:
Journal of the Korean Physical Society. 75:1038-1042
We designed and fabricated silicon positive-intrinsic-negative (PIN) photodiodes coupled with a scintillator for radiation detection. The photodiodes were fabricated on an n-type double-sided polished silicon wafer with a diameter of 6-in., a high re
Autor:
M.H. Lee, H. Park, M.W. Lee, Jin-A Jeon, H.S. Lee, Hyejin Jeon, S.J. Song, H.J. Hyun, H.Y. Lee
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 924:14-18
A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon a
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 912:350-353
In this study, we manufactured silicon PIN photodiodes coupled with a scintillator for X-ray detection in cargo inspections. The classification of photodiodes is made based on their depletion characteristics into two categories: fully depleted (FD) s
Publikováno v:
Sensors and Actuators A: Physical. 280:85-91
To harvest ambient mechanical energy, a triboelectric nanogenerator is actively researched as a sustainable energy source. One of the advantages of the triboelectric nanogenerator is the almost exclusive use of widely available materials that can be
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 912:238-240
The photoelectric absorption of gamma rays in silicon occurs with such low probability that scintillation material is employed in the photostrip detector. We fabricate single-sided photostrip sensors which are sensitive to visible light. Two photodet
Autor:
Kyung-Ku Kang, Hyeyoung Lee, Manwoo Lee, Hyejin Jeon, Sin-Hyung Lee, J.M. Baek, H. Park, Jun Young Kim
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 978:164419
We fabricated a pixelated silicon sensor with a junction field effect transistor (JFET) on a 650 μ m thick, high-resistivity ( > 5 k Ω ⋅ cm) n-type double-sided polished 6-in. silicon wafer using a double-sided fabrication process. The JFET, whic
Publikováno v:
2016 IEEE SENSORS.
It is important to detect low energy gamma rays precisely for the purpose of diagnosis in nuclear medicine, gravitational wave research and detection of underground nuclear test. Since a silicon sensor has an advantage of fast response, good intrinsi