Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sung-Jong Park"'
Publikováno v:
physica status solidi (c). 2:2559-2563
The planar Schottky diodes were fabricated, characterized and modelled to study the electrical characteristics of cracked GaN epitaxial layer on (111) silicon substrate. We deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The oh
Autor:
Jung-Hee Lee, Jae-Hoon Lee, Sung-Jong Park, Heon-Bok Lee, Young-Hyun Lee, Bo-Kyun Kim, Myoung-Bok Lee, Jung-Kyu Kim, Sung-Ho Hahm, Gi-Hong Rue
Publikováno v:
physica status solidi (c). :2309-2313
Schottky-type UV photodetectors with three AlGaN layer structures were designed, simulated and investigated to develope a best performing UV photodetector by inserting a low temperature ultrathin AlGaN interlayer between the active AlGaN and GaN laye
Autor:
Hyun-Ick Cho, Bo-Kyun Kim, Heon-Bok Lee, Yoon-Bong Hahn, Jung-Hee Lee, Sung-Jong Park, Jung-Kyu Kim, Sung-Ho Hahm, Young-Hyun Lee
Publikováno v:
Journal of Sensor Science and Technology. 12:66-71
【Pt/AlGaN Schottky-type UV photodetectors were designed and fabricated. A low-temperature AlGaN interlayer buffer was grown between the AlGaN and GaN film in the diode structure epitaxy to obtain crack-free AlGaN active layers. A comparison was the
Autor:
Soo Jin Chua, Sung-Jong Park, Yong-Woon Choi, Sung-Ho Hahm, Jung-Hee Lee, Wang Lian Shan, Heon-Bok Lee
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.