Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Bruce A. Smith"'
Autor:
Kazuaki Suzuki, Bruce W. Smith
EXPOSURE SYSTEM System Overview of Optical Steppers and Scanners Michael S. Hibbs Optical Lithography Modeling Chris A. Mack Optics for Photolithography Bruce W. Smith Excimer Laser for Advanced Microlithography Palash Das Alignment and Overlay Gregg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda2a6360ba0971d432f32d4482e3f0f
https://doi.org/10.1201/9781315117171
https://doi.org/10.1201/9781315117171
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2018.
As the power of laser produced plasma sources has increased, EUV lens heating has become a major component of process variation. Differential lens heating can cause thermal aberrations which affect system drift during operation, therefore pupil plane
Autor:
Kazuaki Suzuki, Bruce W. Smith
Publikováno v:
Microlithography: Science and Technology, Second Edition
This new edition of the bestselling Microlithography: Science and Technology provides a balanced treatment of theoretical and operational considerations, from elementary concepts to advanced aspects of modern submicron microlithography. Each chapter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::867586f78d814e37c1f7fd13dd4431f0
https://doi.org/10.1201/9781420051537
https://doi.org/10.1201/9781420051537
Autor:
Han-Hao Cheng, Andrew K. Whittaker, Idriss Blakey, Bruce W. Smith, Lan Chen, Warren Montgomery, Peng Xie, Yong Keng Goh
Publikováno v:
Journal of Polymer Science Part A: Polymer Chemistry. 50:4255-4265
Photon-mediated switching of polymer solubility plays a crucial role in the manufacture of integrated circuits by photolithography. Conventional photoresists typically rely on a single switching mechanism based on either a change in polarity or, mole
Autor:
Chris Maloney, Eric Hendrickx, Rik Jonckheere, Germain Fenger, Bruce W. Smith, Ardavan Niroomand, James Word, Gian Lorusso
Publikováno v:
SPIE Proceedings.
As EUV Lithography (EUVL) continues to evolve, it offers a possible solution to the problems of additional masks and lithography steps that drive up the cost and complexity of 193i multiple patterning. EUVL requires a non-telecentric reflective optic
Publikováno v:
SPIE Proceedings.
Historically IC (integrated circuit) device scaling has bridged the gap between technology nodes. Device size reduction is enabled by increased pattern density, enhancing functionality and effectively reducing cost per chip. Exemplifying this trend a
Publikováno v:
Microelectronic Engineering. 34:137-145
Copolymers of trimethysilylmethyl methacrylate and chloromethylstyrene [P(SI-CMS)] have been formulated as negative resists for exposure at 193 nm. To achieve maximum sensitivity, absorption has been targeted so that the amount of radiation exposing
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
Extreme Ultraviolet Lithography (EUVL) at 13.5 nm is currently the most promising technology for advanced integrated circuit (IC) manufacturing nodes. Since the wavelength for EUVL is an order of magnitude smaller than current optical lithography sys
Autor:
Bruce W. Smith, Chris Maloney
Publikováno v:
SPIE Proceedings.
Extreme UV Lithography (EUVL) is generally accepted as the leading candidate for next generation lithography. Several challenges remain for EUVL, especially as its insertion point is pushed to finer resolution. Although diffractive scaling may sugges
Autor:
Emmanuel P. Giannelis, Marie Krysak, Peng Xie, Christopher K. Ober, Markos Trikeriotis, Paul Zimmerman, Bruce W. Smith, Neal Lafferty, Warren Montgomery, Evan L. Schwartz
Publikováno v:
SPIE Proceedings.
We have developed a transparent, high refractive index inorganic photoresist with significantly higher etch resistance than even the most robust polymeric resist. As feature sizes continue to decrease, film thickness must be reduced in order to preve