Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Justin Norman"'
Autor:
Justin Norman, John E. Bowers, Christopher R. Fitch, Igor P. Marko, Stephen J. Sweeney, Daehwan Jung, Aidas Baltusis
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
On-chip lasers are a key component for the realization of silicon photonics. The performance of silicon-based quantum dot (QD) devices is approaching equivalent QDs on native substrates. To drive forward design optimization we investigated the temper
Publikováno v:
IEEE Nanotechnology Magazine. 15:8-22
A self-assembled quantum dot (QD) gain medium has multiple favorable material properties over conventional quantum well (QW) structures and bulk materials, including a large tolerance for material defects, reduced reflection sensitivity, nearly zero
Autor:
Matteo Buffolo, Enrico Zanoni, Gaudenzio Meneghesso, Lorenzo Rovere, Daehwan Jung, Carlo De Santi, John E. Bowers, Matteo Meneghini, Justin Norman, Robert W. Herrick
Publikováno v:
IEEE Journal of Quantum Electronics. 57:1-8
This paper investigates the impact of dislocation density and active layer structure on the degradation mechanisms of 1.3 $\mu \text{m}$ InAs Quantum Dot (QD) lasers for silicon photonics. We analyzed the optical behavior of two sets of samples, havi
Autor:
Bozhang Dong, Justin Norman, Jianan Duan, Zeyu Zhang, Weng W. Chow, John E. Bowers, Heming Huang, Frédéric Grillot
Publikováno v:
Nanophotonics
Nanophotonics, Walter de Gruyter, 2020, 9 (6), pp.1271-1286. ⟨10.1515/nanoph-2019-0570⟩
Nanophotonics, Vol 9, Iss 6, Pp 1271-1286 (2020)
Nanophotonics, Walter de Gruyter, 2020, 9 (6), pp.1271-1286. ⟨10.1515/nanoph-2019-0570⟩
Nanophotonics, Vol 9, Iss 6, Pp 1271-1286 (2020)
Photonic integrated circuits (PICs) have enabled numerous high performance, energy efficient, and compact technologies for optical communications, sensing, and metrology. One of the biggest challenges in scaling PICs comes from the parasitic reflecti
Autor:
Daehwan Jung, Lorenzo Rovere, Gaudenzio Meneghesso, Fabio Samparisi, John E. Bowers, Matteo Meneghini, Justin Norman, Robert W. Herrick, Enrico Zanoni, Matteo Buffolo, Carlo De Santi
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 26:1-8
This work investigates the degradation processes affecting the long-term reliability of 1.3 μm InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechan
Autor:
Chen Shang, Daehwan Jung, Michael Kennedy, Arthur C. Gossard, Robert W. Herrick, Justin Norman, John E. Bowers, Zeyu Zhang, Mario Dumont
Publikováno v:
IEEE Journal of Quantum Electronics. 55:1-11
$p$ -type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are
Autor:
Qiang Li, Noelle Collins, Yating Wan, Songtao Liu, Kei May Lau, Arthur C. Gossard, Ian MacFarlane, Justin Norman, Chen Shang, Mario Dumont, John E. Bowers
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 25:1-7
A three-fold reduction of threshold current, with a minimum threshold current density of 286 A/cm 2 , a maximum operating temperature of 80 °C, and a maximum 3 dB bandwidth of 5.8 GHz was achieved for 1.3 μm InAs quantum dot lasers on patterned, on
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 25:1-9
The linewidth enhancement factor ( $\alpha _\mathrm{H}$ ) is an important parameter for semiconductor lasers. In this paper, we investigate, both theoretically and experimentally, the key parameters that affect $\alpha _\mathrm{H}$ of InAs/GaAs quant
Publikováno v:
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Jun 2021, Munich, France. pp.1-1, ⟨10.1109/CLEO/Europe-EQEC52157.2021.9542300⟩
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Jun 2021, Munich, France. pp.1-1, ⟨10.1109/CLEO/Europe-EQEC52157.2021.9542300⟩
Silicon-based epitaxial quantum dot (QD) lasers with strong tolerance for back-reflections have paved the way for developing isolator-free photonics integrated circuits (PICs). This remarkable feature is attributed to the peculiar benefits of QDs, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b0f4b4cbf76af9f0ba3f673b1755640
https://hal.telecom-paris.fr/hal-03363325
https://hal.telecom-paris.fr/hal-03363325
Autor:
Jianan Duan, Justin Norman, Bozhang Dong, Frédéric Grillot, Heming Huang, Shiyuan Zhao, John E. Bowers
Publikováno v:
Silicon Photonics XVI.
Quantum dot lasers directly grown on silicon are excellent candidates to achieve energy and cost-efficient optical transceivers thanks to their outstanding properties such as high temperature stability, low threshold lasing operation, and high feedba