Zobrazeno 81 - 87
of 87
pro vyhledávání: '"Justin Norman"'
Autor:
Daisuke Inoue, Justin Norman, Arthur C. Gossard, Daehwan Jung, Yating Wan, Chen Shang, John E. Bowers
Publikováno v:
Photonics Research. 6:776
Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing functionalities, offering an attractive approach to miniaturizing photonics in a compact area. Here, we present static and dynamic properties of microring quan
Publikováno v:
APL Photonics, Vol 3, Iss 3, Pp 030901-030901-20 (2018)
Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit
Autor:
Yating Wan, John E. Bowers, Daehwan Jung, Bongki Shin, Justin Norman, Chen Shang, Arthur C. Gossard, Michael Kennedy
Publikováno v:
Applied Physics Letters. 111:122107
We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 ×
Autor:
John E. Bowers, Zeyu Zhang, Alfredo Torres, Chong Zhang, Alan Y. Liu, Evelyn L. Hu, Arthur C. Gossard, Daehwan Jung, Justin Norman, Qiang Li, Yating Wan, Kei May Lau, Di Liang, Duanni Huang, Michael Kennedy
Publikováno v:
Optica. 4:940
As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in a cost-effective way for volume manufacturability. Currently, direct heteroepitaxial
Publikováno v:
Photonics Research. 3:B1
We review recent advances in the field of quantum dot lasers on silicon. A summary of device performance, reliability, and comparison with similar quantum well lasers grown on silicon will be presented. We consider the possibility of scalable, low si
Autor:
Andrew Snyder, John E. Bowers, Amy W. K. Liu, Arthur C. Gossard, Justin Norman, Alan Y. Liu, Chong Zhang, Joel M. Fastenau, Dmitri Lubyshev
Publikováno v:
Applied Physics Letters. 104:041104
We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave thresholds as low as 16 mA, output pow
Autor:
Jenny Selvidge, Hon Ki Tsang, Yating Wan, Yeyu Tong, Justin Norman, Michael Kennedy, Chen Shang, Arthur C. Gossard, John E. Bowers
Publikováno v:
Scopus-Elsevier
Hon Ki Tsang
Hon Ki Tsang
Regrown quantum-dot distributed feedback lasers on (001) Si demonstrated a SMSR of 50 dBm, a threshold current density of 440 A/cm2, a CW operation temperature of 70°C, and a path towards high-volume, low-cost transceivers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5845888f21b369924f716d7724f22e77
http://www.scopus.com/inward/record.url?eid=2-s2.0-85120086857&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85120086857&partnerID=MN8TOARS