Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Justin Norman"'
Autor:
Matteo Buffolo, Enrico Zanoni, Gaudenzio Meneghesso, Lorenzo Rovere, Daehwan Jung, Carlo De Santi, John E. Bowers, Matteo Meneghini, Justin Norman, Robert W. Herrick
Publikováno v:
IEEE Journal of Quantum Electronics. 57:1-8
This paper investigates the impact of dislocation density and active layer structure on the degradation mechanisms of 1.3 $\mu \text{m}$ InAs Quantum Dot (QD) lasers for silicon photonics. We analyzed the optical behavior of two sets of samples, havi
Autor:
Chen Shang, Daehwan Jung, Michael Kennedy, Arthur C. Gossard, Robert W. Herrick, Justin Norman, John E. Bowers, Zeyu Zhang, Mario Dumont
Publikováno v:
IEEE Journal of Quantum Electronics. 55:1-11
$p$ -type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are
Autor:
Robert W. Herrick, Justin Norman, Enrico Zanoni, M. Zenari, Gaudenzio Meneghesso, John E. Bowers, Matteo Buffolo, C. De Santi, Matteo Meneghini
The aim of this paper is to analyse the degradation modes of 1.3 μm InAs quantum dot laser diodes (QD LDs) grown by using carbon as a p-type dopant, as an alternative to beryllium. The devices were stressed at high current densities, to favor the on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::435e7da41599351b8d5d956c158f7344
http://hdl.handle.net/11577/3412517
http://hdl.handle.net/11577/3412517
Autor:
Arthur C. Gossard, Noelle Collins, John E. Bowers, Qiang Li, Mario Dumont, Justin Norman, Bei Shi, Chen Shang, Kei May Lau, Yating Wan
We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88d7de215b3a0b4fc7b31680569b6a35
Autor:
Hon Ki Tsang, Justin Norman, Daehwan Jung, Songtao Liu, Michael Kennedy, Arthur C. Gossard, Xinru Wu, John E. Bowers
Publikováno v:
OFC
A 20-GHz passively mode-locked quantum dot laser directly grown on a silicon substrate is demonstrated as an on-chip wavelength division multiplexing (WDM) source for 4.1 Tb/s data transmission using 64 Nyquist WDM channels.
Autor:
Jennifer Selvidge, Kei May Lau, Yating Wan, Justin Norman, Matthew J. Kennedy, McLean P. Echlin, Arthur C. Gossard, Patrick G. Callahan, Qiang Li, Tresa M. Pollock, Alan Y. Liu, John E. Bowers
High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3367584c5ea3b7d0988d78b27ed9c3f
https://orca.cardiff.ac.uk/id/eprint/115580/1/oe-25-4-3927.pdf
https://orca.cardiff.ac.uk/id/eprint/115580/1/oe-25-4-3927.pdf
Publikováno v:
Applied Physics Letters. 113:041108
Optical frequency comb direct generation on silicon by mode locked lasers (MLLs) is promising as it offers high wavelength channel counts and ultrashort pulses that will benefit future large-scale high capacity silicon photonic integrated circuits. H