Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Youguang Zhang"'
Publikováno v:
IEEE Transactions on Electron Devices. 67:2621-2626
Recent progress has demonstrated that current-induced domain wall motion (CIDWM) is able to achieve efficient and ultrafast magnetic switching in the case of spin–orbit torque (SOT) and Dzyaloshinskii–Moriya interaction (DMI). CIDWM-based devices
Autor:
Weisheng Zhao, Zhenyi Zheng, Yue Zhang, Zhizhong Zhang, Yuanzhi Zhu, Jiang Nan, Kun Zhang, Youguang Zhang
Publikováno v:
IEEE Electron Device Letters. 40:1984-1987
Compared with skyrmions in ferromagnetic (FM) materials, skyrmions in near-compensated ferrimagnetic (FIM) materials demonstrate higher motion velocity and negligible skyrmion Hall (Sky-Hall) angle. This provides a brighter prospect of skyrmions for
Autor:
Ming-Chang Yang, Youguang Zhang, Xing Chen, Erya Deng, Wang Kang, Na Lei, Haoyang Zhang, Weisheng Zhao
Publikováno v:
IEEE Electron Device Letters. 40:722-725
With the increase of the tunneling leakage current resulting from the downscaling of transistor size, cache memory based on semiconductor technologies, i.e., SRAM, is facing big challenges in keeping up with the famous Moore’s law. Nonvolatile memo
Publikováno v:
IEEE Transactions on Computers. 68:617-623
The integral histogram image plays an important role in accelerating the feature computation in vision algorithms. However, the computational process of the integral histogram, called integral computation, has high computational complexity and numero
Autor:
Youguang Zhang, Aida Todri-Sanial, You Wang, Erya Deng, Liuyang Zhang, Hao Cai, Lionel Torres
Publikováno v:
Microelectronics Journal
Microelectronics Journal, Elsevier, 2018, 81, pp.69-75. ⟨10.1016/j.mejo.2018.09.005⟩
Microelectronics Journal, Elsevier, 2018, 81, pp.69-75. ⟨10.1016/j.mejo.2018.09.005⟩
International audience; In the conventional Von-Neumann computer architecture, more energy and time are consumed by the data transport, rather than the computation itself because of the limited bandwidth between the processor and memory. Computing-in
Publikováno v:
Journal of Systems Architecture. 71:2-11
Spin transfer torque magnetic random access memory (STT-MRAM) has been widely considered as one of the most promising candidates for the next-generation nonvolatile memory technologies, thanks to its attractive features, including high density, high
Publikováno v:
NANOARCH
This paper proposes two different magnetic nonvolatile SRAM (MNV-SRAM) cell circuits for low-power and fast backup operation with a compact cell area. They employ perpendicular magnetic tunnel junctions (p-MTJs) as non-volatile backup storage element
Publikováno v:
IEEE Magnetics Letters. 7:1-5
A magnetic non-volatile flip-flop (MNV-FF) design, with the assistance of voltage-controlled magnetic anisotropy (VCMA) effect, is proposed for low-power and high-speed applications. The MNV-FF employs perpendicular-anisotropy magnetic junnel junctio
Autor:
Weisheng Zhao, Youguang Zhang, Lang Zeng, Tianqi Gao, Deming Zhang, Xiaowan Qin, Mingzhi Long
Publikováno v:
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In this paper, we propose an all spin logic device with voltage controlled magnetic anisotropy (VCMA-ASL) and employ negative capacitance (NC) effect as a novel approach to amplify the VCMA effect. A new working strategy of 3-step operation scheme ha
Autor:
Yue Zhang, Youguang Zhang, Fanghui Gong, Lang Zeng, Weisheng Zhao, Tianqi Gao, Xiaowan Qin, Deming Zhang
Publikováno v:
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC).
In this work, we proposed all spin logic device with voltage controlled magnetic anisotropy (VCMA-ASL). Simulation results by spin circuit method reveal that both switching time and energy consumption can be improved. It is shown that by increasing o