Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Yu-Chiang Chao"'
Publikováno v:
Applied Physics Letters. 106:153301
Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No notic
Publikováno v:
Applied Physics Letters. 99:233308
A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the p
Publikováno v:
Applied Physics Letters. 98:223303
In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the devic
Autor:
Ming Che Ku, Hsiao-Wen Zan, Sheng-fu Horng, Yu Chiang Chao, Hsin-Fei Meng, Hung Kuo Tsai, Wu-Wei Tsai
Publikováno v:
Applied Physics Letters. 97:223307
We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3×105 at a low operation voltage of 1.5 V by using high quality insulators both abo
Autor:
Hsiao-Wen Zan, Hsin-Fei Meng, Shih De Yeh, Gao Fong Chang, Chen-Hsiung Hung, Yu Chiang Chao, Tzu-Ching Meng, Sheng-fu Horng, Chain-Shu Hsu
Publikováno v:
Applied Physics Letters. 96:223702
A sensing hydrogel film is demonstrated for real-time and indicator-free detection of nitric oxide (NO) in aqueous solution. The film composed of NO probe 11,16-bisphenyl-6,6,21,21-tetramethyl-m-benzi-6,21-porphodimetheno-chloro-zinc(II) and host pol
Publikováno v:
Applied Physics Letters. 95:253306
Low voltage active pressure sensor is realized by vertically stacking a pressure sensitive rubber on a polymer space-charge-limited transistor. The sensor can be turned on and off by modulating the metal-grid base voltage within the range of 3 V. The
Publikováno v:
Applied Physics Letters. 95:213308
The direct influence of the vertical carrier mobility on the frequency response of bilayered organic photodiodes (PDs) is investigated for the first time. With fullerene as the acceptor material, changing vertical hole mobility from 2.3×10−5 to 2.
Publikováno v:
Applied Physics Letters. 95:203305
Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor chara
Publikováno v:
Applied Physics Letters. 93:223301
Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid bas
Publikováno v:
Applied Physics Letters. 92:093310
Vertical polymer hot-carrier transistor using the low bandgap material poly(3-hexylthiophene) as both the emitter and the collector are studied. The common emitter current gain is shown to depend on the LiF thickness and the emitter thickness, with m