Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Shitan Wang"'
Autor:
Pan Yuan, Yuquan Liu, Haipeng Xie, Junhua Wei, Yuan Zhao, Shitan Wang, Yangyang Zhang, Dongmei Niu, Yongli Gao
Publikováno v:
Results in Physics, Vol 29, Iss , Pp 104692- (2021)
The interface electronic structure between rubrene and permalloy (Ni80Fe20) has been studied by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). We find that the downward energy level bending at the rubrene/NiF
Externí odkaz:
https://doaj.org/article/410b273a03d14e44b6121729ebf65641
Publikováno v:
Results in Physics, Vol 18, Iss , Pp 103222- (2020)
The electronic properties of the interface between Al and black phosphorus were studied by photoemission spectroscopy (PES). We observed that the growth pattern of Al deposited onto the BP film is Stranski-Krastanov mode. There is a reaction between
Externí odkaz:
https://doaj.org/article/29eb0e1ad7af48c280e179ae94a03ca4
Autor:
Yangyang Zhang, Na Liu, Haipeng Xie, Jia Liu, Pan Yuan, Junhua Wei, Yuan Zhao, Baopeng Yang, Jianhua Zhang, Shitan Wang, Han Huang, Dongmei Niu, Qi Chen, Yongli Gao
Publikováno v:
Crystals, Vol 11, Iss 12, p 1544 (2021)
The surface composition and morphology of FA0.85MA0.15Pb(I0.85Br0.15)3 films fabricated by the spin-coating method with different concentrations of NH2-POSS were investigated with atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS),
Externí odkaz:
https://doaj.org/article/3397870ed5024f3d95b551d7fe3d5195
Autor:
Jinxin Liu, Shitan Wang, Xueao Zhang, Han Huang, Chuyun Deng, Xiaoming Zheng, Yuehua Wei, Haipeng Xie, Yongli Gao, Hang Yang, Xiangzhe Zhang
Publikováno v:
Nano Research. 13:952-958
Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier, which is crucial for the realization of high-performance logic components. Here, we systematically investigated a convenient and
Autor:
Junhua Wei, Shitan Wang, Dongmei Niu, Haipeng Xie, Pan Yuan, Yuquan Liu, Yangyang Zhang, Yongli Gao, Yuan Zhao
Publikováno v:
Results in Physics, Vol 29, Iss, Pp 104692-(2021)
The interface electronic structure between rubrene and permalloy (Ni80Fe20) has been studied by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). We find that the downward energy level bending at the rubrene/NiF
Autor:
Yunhao Lu, Junting Xiao, Yuan Zhao, Shitan Wang, Bingchen He, Fei Song, Han Huang, Yao Wang, Qiwei Tian, Haipeng Xie, Yongli Gao
Publikováno v:
Synthetic Metals. 251:24-29
Atomically precise graphene nanoribbons (GNRs) can be on-surface synthesized from halogen containing molecular precursors. Here, we investigated the electronic structure evolution of 10,10′-dibromo-9,9′-bianthracene (DBBA), a famous precursor to
Autor:
Han Huang, Haipeng Xie, Chuan Qian, Yongli Gao, Jia Sun, Dongmei Niu, Junliang Yang, Shitan Wang
Publikováno v:
Organic and Hybrid Light Emitting Materials and Devices XXIV.
There is a significant correlation in organic semiconductor thin films between the morphology and electronic structure, and both have strong effects on device performance. In this presentation, we describe our investigations on the relationship of th
Autor:
Dongmei Niu, Yuquan Liu, Han Huang, Shitan Wang, Baoxing Liu, Haipeng Xie, Yongli Gao, Yuan Zhao, Can Wang
Publikováno v:
The Journal of Physical Chemistry C. 122:18405-18411
The interface electronic structure between Au and black phosphorus has been investigated with ultraviolet and X-ray photoemission spectroscopy. We observed that Au clusters form at the initial Au deposition, and an interface dipole is observed at the
Autor:
Xuhui Wei, Lu Lyu, Yingbao Huang, Can Wang, Haipeng Xie, Yongli Gao, Dongmei Niu, Shitan Wang
Publikováno v:
Applied Surface Science. 416:696-703
The interfacial electronic structure and morphology of 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene(C8-BTBT) on polycrystalline Au film was investigated with photoemission spectroscopy (PES), atomic force microscopy (AFM) and grazing incidence X-ra
Publikováno v:
Results in Physics, Vol 18, Iss, Pp 103222-(2020)
The electronic properties of the interface between Al and black phosphorus were studied by photoemission spectroscopy (PES). We observed that the growth pattern of Al deposited onto the BP film is Stranski-Krastanov mode. There is a reaction between