Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Dalla-Betta, G. -F."'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Nicola Zorzi, Maurizio Boscardin, A. Pozza, Claudio Piemonte, Gian-Franco Dalla Betta, Luciano Bosisio, Sabina Ronchin, A. Zoboli
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 583:149-152
In the past two years 3D silicon radiation detectors have been developed at ITC-irst (Trento, Italy). As a first step toward full 3D devices, simplified structures featuring columnar electrodes of one doping type only were fabricated. This paper repo
Publikováno v:
Fondazione Bruno Kessler-IRIS
We report on the development of double-sided, AC-coupled, microstrip detectors oriented to the A Large Ion Collider Experiment (ALICE). The main design and processing issues are presented, together with some selected results from the electrical chara
Autor:
Corrado Angelini, Giovanni Verzellesi, Filippo Bosi, V. Tyzhnevyi, A. Lusiani, F. Forti, Luca Bidinelli, Fabio Morsani, Giorgio Curzio, G. Batignani, I. Rachevskaia, J. J. Walsh, E. Paoloni, Luigi Rovati, Andrea Bosi, F. Cardellini, L. Bosisio, Claudio Piemonte, A. Del Gratta, Maurizio Boscardin, S. Bettarini, M. Calamosca, Nicola Zorzi, Matteo Bonaiuti, A. Picciotto, Riccardo Ciolini, G. Rizzo, Gabriele Giacomini, Francesco D'Errico, S. Penzo, Davide Saguatti, Mario Giorgi, G.-F. Dalla Betta
A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d046144fa3e6a880029e40bcaf3951fa
https://hdl.handle.net/11368/2836187
https://hdl.handle.net/11368/2836187
Autor:
P. Gregori, Lodovico Ratti, Maria Giuseppina Bisogni, G.-F. Dalla Betta, Gianluca Traversi, M. Ciacchi, Matteo Rama, L. Bosisio, Massimo Manghisoni, S. Bettarini, Claudio Piemonte, Sabina Ronchin, V. Speziali, M. Novelli, Gabriele Simi, Mario Giorgi, G. Batignani, Valerio Re, Maurizio Boscardin, F. Sandrelli, S. Dittongo, F. Forti, Valeria Rosso, Nicola Zorzi, I. Rachevskaia, M. Carpinelli
Publikováno v:
Fondazione Bruno Kessler-IRIS
In the past few years we have developed a technological process allowing for the fabrication of radiation detectors with integrated electronics on high-resistivity silicon substrates. We report on some recent results relevant to the process optimisat
Autor:
Maurizio Boscardin, Claudio Piemonte, Nicola Zorzi, Luciano Bosisio, Gian-Franco Dalla Betta, A. Pozza, Sabina Ronchin
Because of their superior radiation resistance, three-dimensional (3D) silicon sensors are receiving more and more interest for application in the innermost layers of tracker systems for experiments running in very high luminosity colliders. Their sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b73000f7ef5ffa98f37b81b2c4d8d63
https://hdl.handle.net/11368/1714351
https://hdl.handle.net/11368/1714351
Autor:
G. Batignani, Giovanni Verzellesi, Maurizio Boscardin, Claudio Piemonte, G. Giacomini, G.-F. Dalla Betta, L. Bosisio, S. Bettarini
A novel method for biasing phototransistor-based radiation detectors on high-resistivity Si is presented, that relies on the integration into the detector base of a pnp transistor acting as a current source. The proposed approach can be extended in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddb6d454390dc812a44949b49850c3af
https://hdl.handle.net/11380/460420
https://hdl.handle.net/11380/460420
Autor:
Davide Bergamini, Gian-Franco Dalla Betta, Giovanni Verzellesi, Luciano Bosisio, Claudio Piemonte, Maurizio Boscardin, G. Batignani, S. Bettarini
We propose a novel n–p–n BJT radiation detector on high-resistivity silicon with integrated p–n–p transistor providing the quiescent base current of the detector. The dc operational limits of the proposed detector are analysed by means of num
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21cfbba9adeb1982a2f1e396d6d15087
https://hdl.handle.net/11380/305356
https://hdl.handle.net/11380/305356
Autor:
P. Gregori, S. Bettarini, M. Bondioli, Gabriele Giacomini, Claudio Piemonte, Luciano Bosisio, S. Dittongo, Sabina Ronchin, Nicola Zorzi, Maurizio Boscardin, I. Rachevskaia, F. Forti, G. Batignani, G.-F.D. Betta, Marcello Giorgi
n-p-n bipolar phototransistors have been designed and fabricated on high-resistivity silicon substrates. A technology featuring a double implant for the emitter allowed us to obtain a typical current gain of about 600. The device has been tested with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85be3525b596880fcc1bc7765959634d
http://hdl.handle.net/11368/1691024
http://hdl.handle.net/11368/1691024