Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Er‐Jia Guo"'
Publikováno v:
Science China Technological Sciences. 63:874-876
Autor:
Kaihui Chen, Jiali Zhao, Qinghua Zhang, Shi-En Li, Er-Jia Guo, Haijie Qian, Lin Gu, Zhen Fan, Jiaou Wang, Tian Qian, Kurash Ibrahim, Haizhong Guo
Publikováno v:
Journal of Physics: Condensed Matter. 34:064001
Oxygen-vacancy-induced topotactic phase transformation between the ABO2.5 brownmillerite structure and the ABO3 perovskite structure attracts ever-increasing attention due to the perspective applications in catalysis, clean energy field, and memristo
Autor:
Michael R. Fitzsimmons, Daniel Haskel, Lisha Fan, Lixin Sun, Kevin Huang, Dongkyu Lee, Youngseok Jee, William T. Heller, Bilge Yildiz, Er-Jia Guo, Thomas O. Farmer, Qiyang Lu, Matthew F. Chisholm, Jonathan D. Poplawsky, Ho Nyung Lee, Yongseong Choi, Xiang Gao
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Nature Communications
Nature Communications
Oxygen vacancies in complex oxides are indispensable for information and energy technologies. There are several means to create oxygen vacancies in bulk materials. However, the use of ionic interfaces to create oxygen vacancies has not been fully exp
Autor:
Michael R. Fitzsimmons, Lin Gu, Meng He, Chen Ge, Xin Tong, Shan Lin, Er-Jia Guo, Timothy Charlton, Shuang Chen, Qinghua Zhang, Can Wang, Sisi Li, Sujit Das, Kuijuan Jin, Zhenping Wu, Qiao Jin, Manuel A. Roldan, Haizhong Guo
Publikováno v:
Physical Review Applied. 13
Materials with large perpendicular magnetic anisotropy (PMA) are candidates for spintronic devices, such as magnetic random-access memory, etc., due to their stable magnetic reference states. Because of shape anisotropy, the magnetic easy axis of oxi
Autor:
Chen Ge, Haizhong Guo, Can Wang, Haotian Lu, Meng He, Guozhen Yang, Er-Jia Guo, Kuijuan Jin, Jiankun Li
Publikováno v:
ACS applied materialsinterfaces. 11(46)
The development of artificial synapses has enabled the establishment of brain-inspired computing systems, which provides a promising approach for overcoming the inherent limitations of current computer systems. The two-terminal memristors that faithf
Autor:
John W. Freeland, Yaohua Liu, Er-Jia Guo, Michael R. Fitzsimmons, John Nichols, Andreas Herklotz, Ho Nyung Lee, Ryan D. Desautels, Zhaoliang Liao, Changhee Sohn
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 30(15)
Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here, it is found that the concentration of oxygen vacancies (VO ) formed in LaNiO3 (LNO)
Publikováno v:
Frontiers of Physics in China. 5:176-182
Perovskite oxides and heterojunctions have attracted much attention due to their multifunctional properties of electricity and optics and magnetic as well as the very good chemical and thermal stability. In this brief review, we describe the novel pr
Autor:
Lisha Fan, Dongkyu Lee, Matthew F. Chisholm, Thomas Z. Ward, Ho Nyung Lee, Xiang Gao, Michael R. Fitzsimmons, William T. Heller, Gyula Eres, Thomas O. Farmer, Er-Jia Guo
Publikováno v:
Advanced Materials Interfaces. 4:1601034
A novel synthesis route to the formation of vertically aligned single-crystalline oxide nanostructures is found by precisely controlling the nonequilibrium pulsed laser deposition process. Here, the columnar nanostructures with deep crevices offering
Autor:
K. Nenkov, Kathrin Dörr, Hans M. Christen, M. D. Biegalski, Ludwig Schultz, A. D. Rata, Andreas Herklotz, Er-Jia Guo
Publikováno v:
Philosophical transactions. Series A, Mathematical, physical, and engineering sciences. 372(2009)
The role of elastic strain for magnetoelectric materials and devices is twofold. It can induce ferroic orders in thin films of otherwise non-ferroic materials. On the other hand, it provides the most exploited coupling mechanism in two-phase magnetoe
Publikováno v:
Chinese Physics B. 20:037304
Three oxide heterojunctions made of LaAlO3−δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current—voltage characteristics, and the distinct difference in rectification b