Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Youguang Zhang"'
Autor:
Youguang Zhang, Shishen Yan, Yue Zhang, Wenlong Cai, Guanda Wang, Jiang Nan, Zhe Huang, Kaihua Cao, Kun Zhang, Weisheng Zhao, Jinkai Wang, Zhizhong Zhang, Zhenyi Zheng, Lei Chen
Publikováno v:
IEEE Electron Device Letters. 41:928-931
Low on/off ratio gravely hinders the application of magnetoresistance (MR) devices for the accurate and reliable data fetch. In this paper, a rectified tunnel MR (R-TMR) device is fabricated by integrating perpendicular-magnetic-anisotropy magnetic t
Autor:
Shaohua Yan, Zhenyi Zheng, Qunwen Leng, Kun Zhang, Yue Zhang, Guanda Wang, Zhizhong Zhang, Jiang Nan, Youguang Zhang, Weisheng Zhao
Publikováno v:
IEEE Access, Vol 8, Pp 87584-87591 (2020)
Magnetoresistance (MR) effects have been intensively investigated and widely recognized as an effective path for realizing information sensing, storage, and processing. In particular, giant MR (GMR) effect discovered in ferromagnetic/nonmagnetic mult
Publikováno v:
IEEE Transactions on Electron Devices. 66:2795-2801
Although spin transfer torque (STT)-based magnetic tunneling junction (MTJ) owns advantages of nonvolatility, nonlimited endurance, and fast write/read, its demand for high current density significantly casts a shadow over its future prospects. Recen
Autor:
Zhizhong Zhang, Dafiné Ravelosona, Jacques-Olivier Klein, Yue Zhang, Zhenyi Zheng, Weisheng Zhao, Kun Zhang, Guanda Wang, Jinkai Wang, Youguang Zhang
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (5), pp.2431-2436. ⟨10.1109/TED.2019.2906932⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (5), pp.2431-2436. ⟨10.1109/TED.2019.2906932⟩
As the basic storage unit of spin transfer torque magnetic random-access memory (STT-MRAM), the perpendicular magnetic anisotropy (PMA) magnetic tunnel junction (MTJ) has been extensively studied in recent years. Lowering the critical switching curre
Autor:
Chao Zhao, Yihong Lu, Lezhi Wang, Bai Guobin, Huagang Xiong, Lin Li, Zhang Yue, Jiaqi Wei, Shi Liu, Junjie Li, Jianghao Han, Weisheng Zhao, Pan Liu, Henry H. Radamson, Jianfeng Gao, Junfeng Li, Peng Zhang, Jiahan Yu, Wenlong Cai, Kaihua Cao, Hu Yanpeng, Youguang Zhang, Bo Tang, Xiaobin He, Qifeng Jiang, Qihui Zhang, Yizheng Liu, Hushan Cui, Tao Yang
Publikováno v:
Microelectronic Engineering. 209:6-9
In this work, a novel method consisting of side-wall passivation and a top-metal reveal process is proposed for spintronics devices based on magnetic tunnel junctions (MTJs). The method can efficiently protect ferromagnetic metals and magnesium oxide
Publikováno v:
IEEE Transactions on Electron Devices. 65:5537-5544
Magnetic tunnel junctions (MTJs) with low switching current, high thermal stability, and small device size are strongly preferred for low-power, high-reliability, and high-density spintronic memory and logic applications. The research of MTJs from sh
Autor:
Zhizhong Zhang, Xueqiang Feng, Kun Zhang, Weisheng Zhao, Pedram Khalili Amiri, Guanda Wang, Youguang Zhang, Jinyi Sun, Yue Zhang, Kelian Lin, Arnaud Bournel, Jinkai Wang, Lei Chen, Zhenyi Zheng, Yinchang Du
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, In press, ⟨10.1109/LED.2020.3047439⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, In press, ⟨10.1109/LED.2020.3047439⟩
In this letter, we propose a 3D spintronic device stacked by ferrimagnetic (FIM) alloy CoTb layers with a thickness gradient for realizing multi-bit storage and efficient in-memory computing (IMC). Firstly, spin-orbit torque (SOT) induced multi-level
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e06a9cb08a5378c42dfcd03d08ca9733
https://hal.archives-ouvertes.fr/hal-03105663
https://hal.archives-ouvertes.fr/hal-03105663
Publikováno v:
Nanotechnology. 31(37)
The spin torque nano-oscillator (STNO) is a very promising candidate for next generation telecommunication systems due to its small size ~100 nm and high output frequency range. However, it still suffers low output power, usually smaller than µW, an
Autor:
Dafiné Ravelosona, Wang Kang, Youguang Zhang, Weisheng Zhao, Wenlong Cai, Erya Deng, Yu Zhang, Jianlei Yang
Publikováno v:
IEEE Electron Device Letters. 39:684-687
Resistively enhanced magnetic tunnel junction (Re-MTJ) nonvolatile memory devices with a heterogeneous structure of an MTJ surrounded by resistive filaments were investigated for the first time for multi-level cell memory applications. By independent
Autor:
Guodong Wei, Shen Li, Zhaohao Wang, Youguang Zhang, Chen Lv, Xiaoyang Lin, Wei Yang, Yiang Xiong, Weisheng Zhao
Publikováno v:
Applied Physics Letters. 119:122401
Magnetic anisotropy modulation is an effective method to simultaneously reduce the switching current and extend the data retention of magnetic tunnel junction (MTJ), which is promising to be used in the next-generation spin transfer torque (STT) magn