Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Shalnov, A."'
Publikováno v:
Microelectronics Reliability. 39:497-505
The effect of interface trap charge variation during measurement of the MOSFET current–voltage characteristic has been examined. Taking into account this effect, an interface trap density extraction technique is proposed. The transconductance degra
Publikováno v:
IEEE Transactions on Nuclear Science. 42:1660-1666
A possible physical mechanism for bipolar transistor low-dose-rate irradiation response is discussed. This mechanism is described in terms of shallow electron traps in oxide. The experimental results on positive charge build-up at low dose-rates and
Publikováno v:
IEEE Transactions on Nuclear Science. 41:2593-2599
A method for low-dose-rate MOS device response testing is presented and verified. The test technique is based on the use of a special switched-bias irradiation with subsequent positive and negative pulses. The negative bias pulses provide nearly comp