Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Parsian, A."'
Autor:
Thomas S. Wilhelm, Robert A. Burke, Mohadeseh A. Baboli, Anastasiia Fedorenko, Alireza Abrand, Parsian K. Mohseni, Madan Dubey, Seth M. Hubbard, Stephen J. Polly
Publikováno v:
Nanoscale Advances. 3:2802-2811
Self-assembly of vertically aligned III–V semiconductor nanowires (NWs) on two-dimensional (2D) van der Waals (vdW) nanomaterials allows for integration of novel mixed-dimensional nanosystems with unique properties for optoelectronic and nanoelectr
Publikováno v:
MRS Advances. 4:929-936
Rigorous coupled wave analysis (RCWA) simulation was used to model the absorption in periodic arrays of GaAs0.73P0.27 nanowires (NWs) on Si substrates dependent upon the diameter (D), length (L), and spacing (center-to-center distance, or pitch, P) o
Autor:
Seth M. Hubbard, Parsian K. Mohseni, Thomas S. Wilhelm, Hyun Kum, Stephen J. Polly, Mohadeseh A. Baboli, Michael A. Slocum
Publikováno v:
CrystEngComm. 21:602-615
Heterogeneous self-assembly of III–V nanostructures on inert two-dimensional monolayer materials enables novel hybrid nanosystems with unique properties that can be exploited for low-cost and low-weight flexible optoelectronic and nanoelectronic de
Autor:
Hsien Chih Huang, Jeong Dong Kim, Guoqiang Zhang, Wonsik Choi, Chen Zhang, Parsian K. Mohseni, Xiuling Li
Publikováno v:
Nanotechnology. 32(50)
Semiconductor p-n junctions are essential building blocks of electronic and optoelectronic devices. Although vertical p-n junction structures can be formed readily by growth in sequence, lateral p-n junctions normal to surface direction can only be f
Autor:
Julia R. D'Rozario, David M. Wilt, Seth M. Hubbard, Rao Tatavarti, Stephen J. Polly, Parsian K. Mohseni, George T. Nelson
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
In this work, textured back surface reflectors (BSR) produced by inverse progression metal-assisted chemical etching (I-MacEtch) is used to render wavelength-specific (WS) light trapping structures for thin GaAs solar cells. The HAZE reflectance meas
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
A four-terminal dual-junction (2J) nanowire (NW) solar cell device concept is proposed and optimized via combined optoelectronic simulation using TCAD tools by Synopsys®. Rigorous coupled wave analysis (RCWA) was used for simulating absorption in Ga
Autor:
Zihao Wang, Stefan F. Preble, Parsian K. Mohseni, Thomas S. Wilhelm, Mohadeseh A. Baboli, Jian Yan
Publikováno v:
ACS Applied Materials & Interfaces. 10:27488-27497
The ternary III–V semiconductor compound, AlxGa1–xAs, is an important material that serves a central role within a variety of nanoelectronic, optoelectronic, and photovoltaic devices. With all of its uses, the material itself poses a host of fabr
Autor:
Dong Liu, Mohadeseh A. Baboli, Jiarui Gong, Timothy A. Grotjohn, Jung-Hun Seo, Cristian J. Herrera-Rodriguez, Edward Swinnich, Zhenqiang Ma, John D. Albrecht, Parsian K. Mohseni, Aaron Hardy, Jisoo Kim, John Papapolymerou, Sang Jung Cho, Xenofon Konstantinou, Michael Becker
Publikováno v:
BCICTS
We demonstrated GaAs/diamond (GaAs-Csp3) np diodes via lattice-mismatched semiconductor grafting: forming heterostructures with an ultrathin oxide (UO) layer at the interface. High-performance rectifying characteristics were measured from the GaAs/Cs
Autor:
Thomas S. Wilhelm, Mohadeseh A. Baboli, Cody W. Soule, Parsian K. Mohseni, Christopher J. O’Connell
Publikováno v:
ACS Applied Materials & Interfaces. 10:2058-2066
Metal-assisted chemical etching (MacEtch) has been established as a low-cost, benchtop, and versatile method for large-scale fabrication of semiconductor nanostructures and has been heralded as an alternative to conventional top-down approaches such
Autor:
Parsian K. Mohseni, Alex P. Kolberg, Thomas S. Wilhelm, Mohadeseh A. Baboli, Alireza Abrand, Kris A. Bertness
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q134-Q136
A practical nanofabrication process is detailed here for the generation of black GaAs. Discontinuous thin films of Au nanoparticles are electrodeposited onto GaAs substrates to catalyze site-specific etching in a solution of KMnO4 and HF according to