Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Jianjun Zhou"'
Publikováno v:
IEEE Microwave and Wireless Components Letters. 31:1231-1234
A 12-GHz transformer feedback Class-F2,3 voltage-controlled oscillator (VCO) using noise circulating is proposed in this letter. Transformer feedback is utilized in the proposed VCO to achieve Class-F2,3 resonant impedance control at the VCO output a
Publikováno v:
MRS Communications. 11:57-61
The photoelectrochemical (PEC) performance of TiO2 nano-photoanode films was seriously limited due to week photoresponse, effortless recombination of photogenerated electrons/holes, and instability. In this work, we used narrow bandgap semiconductor
Autor:
Shengang Xu, Pan Shu, Xiaofei Cao, Shaokui Cao, Yongqiang Du, Jianjun Zhou, Jiankui Zhou, Yingliang Liu
Publikováno v:
Journal of Materials Chemistry C. 8:12865-12875
The fiber-shaped resistive random access memory (RRAM) is an important subject for flexible wearable electronic textiles. The investigation of the resistive switching (RS) performance of the materials in the basic storage unit (crosspoint) of a flexi
Publikováno v:
ISCAS
This paper demonstrates a combination of mm- wave low noise amplifier (LNA) and active vector-modulated phase shifter (VMPS) in 40-nm CMOS technology. System considerations of noise and gain are discussed in detail. Wideband impedance conversion is r
Autor:
Jiandong Ye, Rong Zhang, Hai Lu, Yang Xu, Youdou Zheng, Jianjun Zhou, Shulin Gu, Xuanhu Chen, Fang-Fang Ren, Dong Zhou, Song Bai
Publikováno v:
IEEE Transactions on Electron Devices. 66:2276-2281
In this paper, carrier transport and gain mechanisms are exploited in the $\beta $ -Ga2O3-based metal–semiconductor–metal photodetectors with Au back-to-back Schottky contacts. The resultant devices exhibit a low dark current of $10^{{3}}$ , and
Autor:
Tangsheng Chen, Jianjun Zhou, Yuechan Kong, Feng Qiu, Xinxin Yu, Hong-Xing Wang, Wang Yanfeng
Publikováno v:
Diamond and Related Materials. 92:146-149
Boron implanted edge terminations have been demonstrated to enhance the breakdown voltages and stabilities of diamond Schottky barrier diodes (SBDs). The edge terminations were achieved by boron implant to form nonconductive amorphous regions under t
Autor:
Wen Zhang, Jijun He, Ruimin Xu, Yu Fu, Bo Yan, Yuechan Kong, Xinxin Yu, Tangsheng Chen, Yuehang Xu, Jianjun Zhou, Yong Zhang
Publikováno v:
IEEE Access, Vol 7, Pp 76868-76877 (2019)
A compact large-signal model for hydrogen-terminated (C-H) diamond metal-oxide field effect transistors (MOSFETs) is presented based on an improved quasi-physical zone division (QPZD) model. Unlike the conventional QPZD model for the AlGaN/GaN high-e
Publikováno v:
2019 IEEE SENSORS.
A simple manufacturing method of highly sensitive optical fiber temperature sensor is presented in this paper. The device consists of an optical microfiber interferometer which is made of side-grooved optical microfiber taper (OMT) embedded in polydi
Autor:
Kai Zhang, Tangsheng Chen, Jianjun Zhou, Kong Cen, Dunjun Chen, Wen Wang, Yuechan Kong, Zhonghui Li, Xinxin Yu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 360-364 (2018)
High power performance InAlGaN/GaN high electron mobility transistor (HEMT) as a candidate for high power and high frequency amplifiers has been demonstrated versus the conventional AlGaN/GaN HEMT by using the same device processes. Comparing with it
Publikováno v:
IEEE Electron Device Letters. 38:1417-1420
Based on a device-first transfer process, a 3-inch polycrystalline diamond substrate is bonded within $1.5~\mu \text{m}$ of the junction in GaN high electron mobility transistors (HEMTs) to enhance heat removal of the high-power RF devices. Highly pr