Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Hee Jun Kim"'
Publikováno v:
ACS Applied Materials & Interfaces. 13:31077-31085
We introduced an organic interlayer into the Schottky contact interface to control the contact property. After inserting an 11-nm-thick polyethylenimine (PEI) interlayer between the aluminum (Al) source/drain electrode and the cuprous oxide (Cu2O) ch
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
We report a novel self-patterning method for solution-processed indium zinc oxide (IZO) thin films based on photosensitive precursors. This approach is an alternative and evolutionary approach to the traditional photoresist patterning techniques. Che
High‐performance vacuum‐processed metal oxide thin‐film transistors: A review of recent developments
Publikováno v:
Journal of the Society for Information Display. 28:591-622
Publikováno v:
Journal of Information Display, Vol 20, Iss 4, Pp 231-237 (2019)
In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104
Autor:
Hyun Jae Kim, Kyung Ho Park, Hee Jun Kim, Jin Hyeok Lee, Won Kyung Min, Tae Soo Jung, Sung Pyo Park
Publikováno v:
SID Symposium Digest of Technical Papers. 50:1279-1282
Autor:
Soo Young Yoon, Seok-Woo Lee, Hee Jun Kim, Jin Hyeok Lee, Jun Hyeon Bae, Hyun Jae Kim, Kwon-Shik Park, Dongwoo Kim, In-Byeong Kang, Tae Soo Jung, Sung Pyo Park
Publikováno v:
ACS applied materialsinterfaces. 12(34)
Copper(I) oxide (Cu2O), which is obtained from copper(II) oxide (CuO) through a reduction process, is a p-type oxide material with a band gap of 2.1–2.4 eV. However, the switching performance of ty...
Autor:
Kyung Ho Park, Dongwoo Kim, Hyun Jae Kim, Ki Woo Kim, Sung Pyo Park, Won Kyung Min, Hee Jun Kim, Jin Hyeok Lee
Publikováno v:
ACS applied materialsinterfaces. 12(22)
P-type copper oxide (CuxO) thin-film transistors (TFTs) with enhanced switching characteristics were fabricated by introducing a sputter-processed capping layer capable of controlling the back-channel phase (labeled as phase-controlling layer, PCL).
Publikováno v:
ECS Transactions. 86:95-104
Publikováno v:
IEEE Transactions on Applied Superconductivity. 28:1-5
This paper describes the construction of an embedded flexible inductor using Fe–Si–Al powder composite films with a μr of 140, and proposes a low-power dc–dc converter using this inductor. The fabricated composite films are composed of mixed 8
Publikováno v:
Journal of Information Display. 17:93-101
In this review, the multi-stacked active-layer (MSAL) structures for the solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are summarized to improve their electric...