Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Hao, Tong"'
Autor:
Jiang Liu, Yuan Wu, Jinpan Xiao, Xiaogang Zhang, Xvdong Chen, Daxiong Gong, Jie Liu, Hao Tong, Tingting Li
Publikováno v:
Ceramics International. 47:33020-33027
The low capacitance utilization and capacitance fading of manganese dioxide (MnO2) is mainly due to poor electro-conductivity and irreversible phase transform. This work proposes a new method of designing hierarchical and binder-free electrode based
Publikováno v:
IEEE Transactions on Electron Devices. 68:5592-5597
In this work, the time-delay effect on device operation caused by capacitance is studied in terms of phase-change memory (PCM) integrated with an ovonic threshold switch (OTS) selector. The capacitance studied in this work is the intrinsic capacitanc
Autor:
Hao Tong, Xingsheng Wang, Xiangshui Miao, Ming Xu, Jason K. Eshraghian, Jun-Hui Yuan, Lin Qi, Jinlong Feng, Long Liu
Publikováno v:
Journal of Materials Chemistry C. 9:14799-14807
Conductive bridge threshold switching (CBTS) selector is a selector candidate for large-scale 3D crosspoint memory. In spite of its high selectivity, the generally low current density (JON) of
Autor:
Yuxian Li, Hao Tong, Shougen Yin, Huanqi Cao, Jianyong Zhai, Ziyi Li, Ming Zhao, Chen Wang, Daming Zhuang
Publikováno v:
Ceramics International. 47:2288-2293
Sputtering with copper indium gallium selenide (CIGS) ceramic targets could produce smooth CIGS thin films that are preferred for preparing two-terminal tandem devices. However, grain sizes prepared in this way are small and device efficiency was low
Autor:
Hao Tong, Ming Xu, Xiaojie Wang, Lin Qi, Jinlong Feng, Xiangshui Miao, Meng Xu, Andriy Lotnyk, Xiaomin Cheng, Hagen Bryja
Publikováno v:
ACS Applied Materials & Interfaces. 12:33397-33407
Ge-Sb-Te (GST)-based phase-change memory (PCM) excels in the switching performance but remains insufficient of the operating speed to replace cache memory (the fastest memory in a computer). In this work, a novel approach using Sb2Te3 templates is pr
Autor:
Cai-Zhuang Wang, Songyou Wang, Hao Tong, Xiaomin Cheng, Kai-Ming Ho, Rongchuan Gu, Xiangshui Miao, Ming Xu, Chong Qiao, Meng Xu
Publikováno v:
Journal of Materials Chemistry C.
Sb-Based phase-change materials have exhibited tremendous advantages in both data storage and reconfigurable photonic devices. Despite the intensive studies on their structures and properties in the crystalline state, the widely used amorphous phase
Publikováno v:
IEEE Electron Device Letters. 39:496-499
We demonstrate a CuS/GeSe dual-layer selector with excellent performance. This CuS/GeSe dual-layer selector exhibits ultrahigh selectivity ( $\text {1.25}\times \text {10}^{\text {9}}$ ), high on-current drive ( $600~\mu \text{A}$ ), ultralow off cur
Publikováno v:
Nanotechnology. 32:345302
Nano electro discharge machining (nano EDM), as a frontier processing method in the research stage of exploration, has an important application prospect in the machining of metal and alloy materials for achieving nanoscale removal resolution. A pulse
Publikováno v:
Applied Physics Letters. 118:203502
In this paper, we present a multiple layer device for investigating the impact of electric field on the conductance switching of GeTe phase change material excluding the contribution from Joule heat. The device includes a dielectric layer with excell
Fabrication of flexible nanoporous nitrogen-doped graphene film for high-performance supercapacitors
Publikováno v:
Journal of Solid State Electrochemistry. 21:1653-1663
Flexible nanoporous nitrogen-doped graphene film ( PNGF) prepared by facile hydrothermal ammonia reaction of nanoporous graphene oxide film (PGOF) is reported. The specific capacitance of the PNGF are 468 F g−1 at a scan rate of 2 mV s−1. The cap